New Leakage Mechanism and Dielectric Breakdown Layer Detection in Metal-Nanocrystal-Embedded Dual-Layer Memory Gate Stack

2011 ◽  
Vol 32 (6) ◽  
pp. 800-802 ◽  
Author(s):  
Zin Zar Lwin ◽  
Kin Leong Pey ◽  
Nagarajan Raghavan ◽  
Yining Chen ◽  
Souvik Mahapatra
Keyword(s):  
Dielectric Breakdown ◽  
Gate Stack ◽  
Leakage Mechanism

Reliability of Metal Gate / High-k devices and its impact on CMOS technology scaling

MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 2973-2982 ◽  
Author(s):  
Andreas Kerber
Keyword(s):  
Dielectric Breakdown ◽  
Cmos Technology ◽  
Gate Stack ◽  
Leakage Currents ◽  
Technology Scaling ◽  
Device Scaling ◽  
Novel Device ◽  
Time Dependent Dielectric Breakdown ◽  
Bias Temperature Instability ◽  
High K

ABSTRACTMG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

Nano-characterisation of dielectric breakdown in the various advanced gate stack MOSFETs

2007 ◽  
Vol 4 (4) ◽  
pp. 347 ◽  
Author(s):  
K.L. Pey ◽  
C.H. Tung ◽  
R. Ranjan ◽  
V.L. Lo ◽  
M. MacKenzie ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Stack

Reliability Perspective of High-k Gate Stack Assessed by Temperature Dependence of Dielectric Breakdown

2007 ◽  
Author(s):  
Kenji Okada ◽  
Tsuyoshi Horikawa ◽  
Hideki Satake ◽  
Seiji Inumiya ◽  
Yasushi Akasaka ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dielectric Breakdown ◽  
Gate Stack ◽  
High K

Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications

2010 ◽  
Vol 96 (14) ◽  
pp. 142901 ◽  
Author(s):  
N. Raghavan ◽  
K. L. Pey ◽  
W. H. Liu ◽  
X. Wu ◽  
X. Li
Keyword(s):  
Dielectric Breakdown ◽  
Gate Stack

Effects of Electrical Discharges in Low Pressure Gases on the Morphology of Polyethylene Crystals

1974 ◽  
Vol 32 ◽  
pp. 544-545
Author(s):  
L.H. Bolz ◽  
D.H. Reneker
Keyword(s):  
Power Distribution ◽  
Electrical Discharge ◽  
Dielectric Breakdown ◽  
Ionic Species ◽  
Low Pressure ◽  
Polymer Surfaces ◽  
Electrical Discharges ◽  
Adhesive Bonds ◽  
Power Distribution Lines ◽  
Modification Of The Surface

The attack, on the surface of a polymer, by the atomic, molecular and ionic species that are created in a low pressure electrical discharge in a gas is interesting because: 1) significant interior morphological features may be revealed, 2) dielectric breakdown of polymeric insulation on high voltage power distribution lines involves the attack on the polymer of such species created in a corona discharge, 3) adhesive bonds formed between polymer surfaces subjected to such SDecies are much stronger than bonds between untreated surfaces, 4) the chemical modification of the surface creates a reactive surface to which a thin layer of another polymer may be bonded by glow discharge polymerization.

Dielectric Breakdown Properties of Poly-Lactic Acid with Spherulites Growth

2014 ◽  
Vol 134 (4) ◽  
pp. 237-242
Author(s):  
Naru Matsugasaki ◽  
Katsuyoshi Shinyama ◽  
Shigetaka Fujita
Keyword(s):  
Lactic Acid ◽  
Dielectric Breakdown ◽  
Poly Lactic Acid

Dielectric Breakdown of Transformer Insulation Materials Under Cryogenic and Room Temperatures

2008 ◽  
Author(s):  
Horatio Rodrigo ◽  
Wolfgang Baumgartinger ◽  
Aniket Ingrole ◽  
Z (Richard) Liang ◽  
Danny George. Crook ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Insulation Materials ◽  
Transformer Insulation

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

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