Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

2011 ◽  
Vol 32 (6) ◽  
pp. 767-769 ◽  
Author(s):  
Myung-Koo Kang ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sequential Lateral Solidification

Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures

2004 ◽  
Vol 19 (2) ◽  
pp. 481-487 ◽  
Author(s):  
Ji-Yong Park ◽  
Hye-Hyang Park ◽  
Ki-Yong Lee ◽  
Ho-Kyoon Chung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Light Emitting Diode ◽  
Superior Performance ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Average Value ◽  
Sequential Lateral Solidification ◽  
Device Properties

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

Performance of thin-film transistors fabricated by sequential lateral solidification crystallization techniques

2008 ◽  
Vol 5 (12) ◽  
pp. 3634-3637 ◽  
Author(s):  
M. A. Exarchos ◽  
D. C. Moschou ◽  
G. J. Papaioannou ◽  
D. N. Kouvatsos ◽  
A. T. Voutsas
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sequential Lateral Solidification

Noise performance of polycrystalline silicon thin-film transistors made by sequential lateral solidification

2003 ◽  
Vol 82 (16) ◽  
pp. 2709-2711 ◽  
Author(s):  
A. Bonfiglietti ◽  
A. Valletta ◽  
L. Mariucci ◽  
A. Pecora ◽  
G. Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Noise Performance ◽  
Silicon Thin Film ◽  
Sequential Lateral Solidification

Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility

2000 ◽  
Vol 621 ◽  
Author(s):  
Ralf Dassow ◽  
Jürgen R. Köhler ◽  
Melanie Nerding ◽  
Horst P. Strunk ◽  
Youri Helen ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Solidification Process ◽  
Repetition Frequency ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Sequential Lateral Solidification ◽  
P Type

ABSTRACTWe crystallize amorphous silicon films with a frequency doubled Nd:YVO4 laser operating at a repetition frequency of up to 50 kHz. A sequential lateral solidification process yields polycrystalline silicon with grains longer than 100 μm and a width between 0.27 and 1.7 μm depending on film thickness and laser repetition frequency. The average grain size is constant over the whole crystallized area of 25 cm2. Thin film transistors with n- type and p-type channels fabricated from the polycrystalline films have average field effect mobilities of μn = 467 cm2/Vs and μp = 217 cm2/Vs respectively. As a result of the homogeneous grain size distribution, the standard deviation of the mobility is only 5%.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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