New Bidirectional T-Shaped Triple-Gate n-Type Polycrystalline Silicon Thin-Film Transistors Formed by Low-Temperature Sequential Lateral Solidification Process to Reduce of Kink Effects
2010 ◽
Vol 49
(3)
◽
pp. 03CD03
◽
2007 ◽
Vol 46
(7A)
◽
pp. 4021-4027
◽
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2000 ◽
Vol 266-269
◽
pp. 1279-1283
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Keyword(s):