Impact of Mechanical Bending on ZnO and IGZO Thin-Film Transistors

2010 ◽  
Author(s):  
Kunigunde H. Cherenack ◽  
Niko S. Munzenrieder ◽  
Gerhard Troster
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mechanical Bending

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

2010 ◽  
Vol 54 (11) ◽  
pp. 1485-1487 ◽  
Author(s):  
M.C. Wang ◽  
S.W. Tsao ◽  
T.C. Chang ◽  
Y.P. Lin ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Leakage Currents ◽  
Bending Effect ◽  
Mechanical Bending

scholarly journals Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1871-1876 ◽  
Author(s):  
Chen Jiang ◽  
Hanbin Ma ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Low Cost ◽  
Organic Thin Film Transistors ◽  
Operating Voltage ◽  
Wearable Electronics ◽  
Organic Thin Film ◽  
Large Area ◽  
Mechanical Bending

Abstract:All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (<3 V), small subthreshold slope (128 mV/decade), good mobility (0.1 cm2 V−1 s−1), close-to-zero threshold voltage (−0.16 V), and high on/off ratio (>105). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.

Stability of Pentacene Thin Film Transistors Under Simultaneous Mechanical Bending and Heating

2013 ◽  
Vol 13 (12) ◽  
pp. 8002-8006
Author(s):  
Sung Won Cho ◽  
Do Il Kim ◽  
Byeong Ung Hwang ◽  
Nae-Eung Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mechanical Bending

Effects of piezoresistivity of pentacene channel in organic thin film transistors under mechanical bending

2012 ◽  
Vol 8 (1) ◽  
pp. 11-16 ◽  
Author(s):  
Do-Il Kim ◽  
Byeong-Ung Hwang ◽  
Nguyen Thanh Tien ◽  
Il-Jin Kim ◽  
Nae-Eung Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Mechanical Bending

Effect of Island Configuration and Neutral Axis Location for Mechanical Bending Strain on a-IGZO Thin Film Transistors

2015 ◽  
Vol 66 (1) ◽  
pp. 241-247 ◽  
Author(s):  
C. B. Park ◽  
J. J. Kim ◽  
H. Na ◽  
T. H. Moon ◽  
S. S. Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Neutral Axis ◽  
Bending Strain ◽  
Mechanical Bending

Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors

2012 ◽  
Vol 13 (11) ◽  
pp. 2401-2405 ◽  
Author(s):  
D.I. Kim ◽  
B.U. Hwang ◽  
J.S. Park ◽  
H.S. Jeon ◽  
B.S. Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Complementary Inverters ◽  
Mechanical Bending

scholarly journals Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3248 ◽  
Author(s):  
Youngjin Seo ◽  
Hwan-Seok Jeong ◽  
Ha-Yun Jeong ◽  
Shinyoung Park ◽  
Jun Tae Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Stress ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Bending Stress ◽  
Threshold Voltage Shift ◽  
Electrical Stress ◽  
Mechanical Bending

We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The IGZO TFTs exhibited a threshold voltage shift (∆VTH) under an application of positive-bias-stress (PBS), with a turnaround behavior from the positive ∆VTH to the negative ∆VTH with an increase in the PBS application time, whether a mechanical stress is applied or not. However, the magnitudes of PBS-induced ∆VTH in both the positive and negative directions exhibited significantly larger values when a flexible IGZO TFT was under mechanical-bending stress than when it was at the flat state. The observed phenomena were possibly attributed to the mechanical stress-induced interface trap generation and the enhanced hydrogen diffusion from atomic layer deposition-grown Al2O3 to IGZO under mechanical-bending stress during PBS. The subgap density of states was extracted before and after an application of PBS under both mechanical stress conditions. The obtained results in this study provided potent evidence supporting the mechanism suggested to explain the PBS-induced larger ∆VTHs in both directions under mechanical-bending stress.

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