scholarly journals Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1871-1876 ◽  
Author(s):  
Chen Jiang ◽  
Hanbin Ma ◽  
Arokia Nathan

Abstract:All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (<3 V), small subthreshold slope (128 mV/decade), good mobility (0.1 cm2 V−1 s−1), close-to-zero threshold voltage (−0.16 V), and high on/off ratio (>105). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.

Author(s):  
Sujin Sung ◽  
Won-June Lee ◽  
Marcia M. Payne ◽  
John E. Anthony ◽  
Chang-Hyun Kim ◽  
...  

Correction for ‘Large-area printed low-voltage organic thin film transistors via minimal-solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.


2020 ◽  
Vol 8 (43) ◽  
pp. 15112-15118
Author(s):  
Sujin Sung ◽  
Won-June Lee ◽  
Marcia M. Payne ◽  
John E. Anthony ◽  
Chang-Hyun Kim ◽  
...  

Large-area printed low-voltage organic thin film transistors are fabricated with the bar-coating of minimal solutions of cross-linked dielectric and organic semiconductor.


2010 ◽  
Vol 11 (12) ◽  
pp. 1960-1965 ◽  
Author(s):  
Natalia A. Azarova ◽  
Jack W. Owen ◽  
Claire A. McLellan ◽  
Marsha A. Grimminger ◽  
Eric K. Chapman ◽  
...  

2014 ◽  
Vol 2 (16) ◽  
pp. 2998-3004 ◽  
Author(s):  
Mingdong Yi ◽  
Yuxiu Guo ◽  
Jialin Guo ◽  
Tao Yang ◽  
Yuhua Chai ◽  
...  

Low operational voltage flexible organic thin-film transistors (OTFTs) have been achieved using two layers of cross-linked PVP as the dielectric layer on a flexible polyimide (PI) substrate.


2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.


2019 ◽  
Vol 73 ◽  
pp. 286-291
Author(s):  
Afra Al Ruzaiqi ◽  
Hideki Okamoto ◽  
Yoshihiro Kubozono ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
...  

2020 ◽  
Vol 6 (21) ◽  
pp. eaaz5156 ◽  
Author(s):  
James W. Borchert ◽  
Ute Zschieschang ◽  
Florian Letzkus ◽  
Michele Giorgio ◽  
R. Thomas Weitz ◽  
...  

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.


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