Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack

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scholarly journals Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack

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High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

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Threshold Voltage ◽  
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scholarly journals Multibit non-volatile memory based on WS2 transistor with engineered gate stack

AIP Advances ◽  
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