Observation of Threshold-Voltage Instability in Single-Crystal Silicon TFTs on Flexible Plastic Substrate

2007 ◽  
Vol 28 (7) ◽  
pp. 590-592 ◽  
Author(s):  
Hao-Chih Yuan ◽  
G.K. Celler ◽  
Zhenqiang Ma
Keyword(s):  
Single Crystal ◽  
Threshold Voltage ◽  
Single Crystal Silicon ◽  
Plastic Substrate ◽  
Crystal Silicon ◽  
Voltage Instability ◽  
Flexible Plastic Substrate

Threshold-Voltage Instability of Single-Crystal Si Thin-Film Transistors Fabricated on Plastic Substrate

2019 ◽  
Vol 3 (8) ◽  
pp. 81-85
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Max G. Lagally ◽  
George E. Celler
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Plastic Substrate ◽  
Voltage Instability ◽  
Si Thin Film

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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