scholarly journals Charge trapping in ultrathin hafnium silicate/metal gate stacks

2005 ◽  
Vol 26 (12) ◽  
pp. 913-915 ◽  
Author(s):  
P. Srinivasan ◽  
N.A. Chowdhury ◽  
D. Misra
Keyword(s):  
Charge Trapping ◽  
Gate Stacks ◽  
Metal Gate ◽  
Hafnium Silicate

Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks

2011 ◽  
Vol 520 (5) ◽  
pp. 1511-1515 ◽  
Author(s):  
Chih-Hao Dai ◽  
Ting-Chang Chang ◽  
Ann-Kuo Chu ◽  
Yuan-Jui Kuo ◽  
Ya-Chi Hung ◽  
...  
Keyword(s):  
Frequency Dependence ◽  
Charge Trapping ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1901-1904 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K ◽  
Enhanced Degradation

Fermi level pinning by defects in HfO2-metal gate stacks

2007 ◽  
Vol 91 (13) ◽  
pp. 132912 ◽  
Author(s):  
J. Robertson ◽  
O. Sharia ◽  
A. A. Demkov
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Metal Gate ◽  
Fermi Level Pinning
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