High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

2005 ◽  
Vol 26 (2) ◽  
pp. 96-98 ◽  
Author(s):  
G. Gudjonsson ◽  
H.O. Olafsson ◽  
F. Allerstam ◽  
P.-A. Nilsson ◽  
E.O. Sveinbjornsson ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Aluminum Ion ◽  
Ion Implanted

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

2005 ◽  
pp. 833-836
Author(s):  
G. Gudjónsson ◽  
H.Ö. Ólafsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
Einar O. Sveinbjörnsson ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Aluminium Ion ◽  
Ion Implanted

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

2005 ◽  
Vol 483-485 ◽  
pp. 833-836 ◽  
Author(s):  
G. Gudjónsson ◽  
H.Ö. Ólafsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
Einar Ö. Sveinbjörnsson ◽  
...  
Keyword(s):  
Field Effect ◽  
Functional Relationship ◽  
Gate Oxide ◽  
Aluminum Concentration ◽  
Field Effect Mobility ◽  
P Type ◽  
Channel Region ◽  
Mobility Reduction ◽  
Peak Field ◽  
Ion Implanted

We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.

Process Optimisation for 4H-SiC MOSFET Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1051-1054 ◽  
Author(s):  
Caroline Blanc ◽  
Dominique Tournier ◽  
Phillippe Godignon ◽  
D.J. Brink ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Field Effect ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Process Optimisation ◽  
Field Effect Mobility ◽  
Oxide Formation ◽  
Step Procedure ◽  
P Type ◽  
Peak Value ◽  
Gas Precursor

We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide formation. First is a thin, dry, thermal SiO2 layer grown at 1050°C for 1 hour. Next, is a thick (50 nm) layer of complementary oxide deposited by PECVD using TEOS as gas precursor. With respect to the standard thermal oxidation process, this results in much improvement of the field effect mobility. For the best samples, we find a peak value in the range of 330 cm2/Vs while, on the full wafer, an average mobility of about 160 cm2/Vs is found. Up to now, this is one of the best results ever reported for 4H-SiC MOSFETs.

scholarly journals Side-chain modulation of dithienofluorene-based copolymers to achieve high field-effect mobilities

2017 ◽  
Vol 8 (4) ◽  
pp. 2942-2951 ◽  
Author(s):  
Chia-Hao Lee ◽  
Yu-Ying Lai ◽  
Jhih-Yang Hsu ◽  
Po-Kai Huang ◽  
Yen-Ju Cheng
Keyword(s):  
Field Effect ◽  
High Field ◽  
Side Chain ◽  
Field Effect Mobility

A new polymerPDTFDPP20based on dithieno[3,2-b:6,7-b′]fluorene (DTF) unit was developed. This polymer with a face-on orientation has achieved a high field-effect mobility up to 5 cm2V−1s−1.

scholarly journals Unexpectedly high field-effect mobility of a soluble, low molecular weight oligoquaterthiophene fraction with low polydispersity

2008 ◽  
Vol 95 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Patrick Pingel ◽  
Achmad Zen ◽  
Dieter Neher ◽  
Ingo Lieberwirth ◽  
Gerhard Wegner ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
High Field ◽  
Low Molecular Weight ◽  
Field Effect Mobility

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film
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