Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability through Interface Engineering

2020 ◽  
Vol 2 (7) ◽  
pp. 2132-2140
Author(s):  
Jianfeng Jiang ◽  
Yu Zhang ◽  
Aizhu Wang ◽  
Jiazhi Duan ◽  
Hao Ji ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Interface Engineering ◽  
Excellent Stability

Asymmetric organic semiconductors for high performance single crystalline field-effect transistors with low activation energy

2020 ◽  
Vol 8 (18) ◽  
pp. 6006-6012 ◽  
Author(s):  
Fei Qiu ◽  
Yicai Dong ◽  
Jie Liu ◽  
Yanan Sun ◽  
Hua Geng ◽  
...  
Keyword(s):  
Activation Energy ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Crystalline Field ◽  
Asymmetric Structures ◽  
Anthracene Derivatives

We synthesized three asymmetric anthracene derivatives, in which 2-phvA shows a high field-effect mobility of 10 cm2 V−1 s−1. This work demonstrates the potential advantages of asymmetric structures for high-performance organic semiconductors.

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

2016 ◽  
Vol 858 ◽  
pp. 671-676 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Vipindas Pala ◽  
Brett A. Hull ◽  
Scott Allen ◽  
John W. Palmour
Keyword(s):  
Nitric Oxide ◽  
Field Effect ◽  
Alkaline Earth ◽  
Phonon Scattering ◽  
Breakdown Strength ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
Alkaline Earth Elements

Alkaline earth elements Sr and Ba provide SiO2/SiC interface conditions suitable for obtaining high channel mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs) on the Si-face (0001) of 4H-SiC, without the standard nitric oxide (NO) anneal. The alkaline earth elements Sr and Ba located at/near the SiO2/SiC interface result in field-effect mobility (μFE) values as high as 65 and 110 cm2/V.s, respectively, on 5×1015 cm-3 Al-doped p-type SiC. As the SiC doping increases, peak mobility decreases as expected, but the peak mobility remains higher for Ba interface layer (Ba IL) devices compared to NO annealed devices. The Ba IL MOSFET field-effect mobility decreases as the temperature is increased to 150 °C, as expected when mobility is phonon-scattering-limited, not interface-trap-limited. This is in agreement with measurements of the interface state density (DIT) using the high-low C-V technique, indicating that the Ba IL results in lower DIT than that of samples with nitric oxide passivation. Vertical power MOSFET (DMOSFET) devices (1200V, 15A) fabricated with the Ba IL have a 15% lower on-resistance compared to devices with NO passivation. The DMOSFET devices with a Ba IL maintain a stable threshold voltage under NBTI stress conditions of-15V gate bias stress, at 150 °C for 100hrs, indicating no mobile ions. Secondary-ion mass-spectrometry (SIMS) analysis confirms that the Sr and Ba remain predominantly at the SiO2/SiC interface, even after high temperature oxide annealing, consistent with the observed high channel mobility after these anneals. The alkaline earth elements result in enhanced SiC oxidation rate, and the resulting gate oxide breakdown strength is slightly reduced compared to NO annealed thermal oxides on SiC.

scholarly journals Side-chain modulation of dithienofluorene-based copolymers to achieve high field-effect mobilities

2017 ◽  
Vol 8 (4) ◽  
pp. 2942-2951 ◽  
Author(s):  
Chia-Hao Lee ◽  
Yu-Ying Lai ◽  
Jhih-Yang Hsu ◽  
Po-Kai Huang ◽  
Yen-Ju Cheng
Keyword(s):  
Field Effect ◽  
High Field ◽  
Side Chain ◽  
Field Effect Mobility

A new polymerPDTFDPP20based on dithieno[3,2-b:6,7-b′]fluorene (DTF) unit was developed. This polymer with a face-on orientation has achieved a high field-effect mobility up to 5 cm2V−1s−1.

scholarly journals Unexpectedly high field-effect mobility of a soluble, low molecular weight oligoquaterthiophene fraction with low polydispersity

2008 ◽  
Vol 95 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Patrick Pingel ◽  
Achmad Zen ◽  
Dieter Neher ◽  
Ingo Lieberwirth ◽  
Gerhard Wegner ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
High Field ◽  
Low Molecular Weight ◽  
Field Effect Mobility
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