Atomic Layer Deposition of High-<tex>$kappa$</tex>Dielectric for Germanium MOS Applications—Substrate Surface Preparation

2004 ◽  
Vol 25 (5) ◽  
pp. 274-276 ◽  
Author(s):  
C.O. Chui ◽  
H. Kim ◽  
P.C. McIntyre ◽  
K.C. Saraswat
Keyword(s):  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Layer Deposition

Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3film

2013 ◽  
Vol 24 (45) ◽  
pp. 455701
Author(s):  
Joonsung Kim ◽  
Jangyeol Yoon ◽  
Junhong Na ◽  
Seongmin Yee ◽  
Gyu Tae Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals USING OF ATOMIC LAYER DEPOSITION METHOD FOR OBTAINING THIN FILMS BASED ON LiMn2O4 AND LiFePO4

2020 ◽  
Vol 63 (9) ◽  
pp. 77-81
Author(s):  
Oksana Yu. Gants ◽  
Vladimir M. Kashkin ◽  
Angelina D. Yudina ◽  
Valentina O. Zhirnova ◽  
Anna S. Timonina ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Growth ◽  
Process Temperature ◽  
Optimal Time ◽  
Influence Of Process Parameters ◽  
Layer Deposition

An approach to the synthesis of LiFePO4 and LiMn2O4 by atomic layer deposition is proposed and successfully implemented. The main regularities of the process are revealed and the method of synthesis realization is proposed. The following reagents were proposed and used: 2,2,6,6-tetramethylheptan-3,5 - dione of manganese, oxygen, iron (II) chloride, trimethyl phosphate, water and lithium tret-butylate. Nitrogen was used as an inert gas for purging the reactor and as a carrier gas. The influence of process parameters on the synthesis of thin films based on LiFePO4 and LiMn2O4 is described. It has been established that the phase composition of the resulting films is influenced by the time of precursor release and the process temperature. It is concluded that the increase in process temperature has a positive effect on the density of thin films of LiFePO4 and LiMn2O4. The optimum deposition temperature of LiFePO4 and LiMn2O4 is 400 ºC. It was shown that it is possible to regulate the content of each element and phase composition in films based on LiFePO4 and LiMn2O4 by changing the time of precursors release. The optimal time for the release of precursors for the synthesis of LiFePO4 and LiMn2O4 is 4 s under the stated conditions. Of great importance is the time of release of oxidizing agents-4 and 6 s for the deposition of LiFePO4 and LiMn2O4, respectively. The correlation of the layer growth rate per cycle was revealed, which was 0.2 nm/cycle for the synthesis of LiFePO4. The film obtained in the process is X-ray amorphous. To obtain the crystal structure, the films were annealed in argon at a temperature of 800 ºC. The mechanism of interaction of precursors with the substrate surface is studied. The influence of substrate activation on the uniformity of film growth is revealed.

scholarly journals Adsorption of Titanium Halides on Nitride and Oxide Surfaces during Atomic Layer Deposition: A DFT Study

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Jeongwoo Park ◽  
Neung Kyung Yu ◽  
Donghak Jang ◽  
Eunae Jung ◽  
Hyunsik Noh ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Functional Groups ◽  
Density Functional ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Dissociative Adsorption ◽  
Reaction Rate Constant ◽  
Dft Study ◽  
Layer Deposition

Various processes based on atomic layer deposition (ALD) have been reported for growing Ti-based thin films such as TiN and TiO2. To improve the uniformity and conformity of thin films grown via ALD, fundamental understanding of the precursor–substrate surface reactions is required. Herein, we present a density functional theory (DFT) study of the initial nucleation process of some titanium halide precursors (TiCl4, TiBr4, and TiI4) on Si surfaces having –OH or –NH2 functional groups. We consider the most favorable adsorption site in the reaction between the precursor and functional group of the surface, based on the thermodynamics and kinetics of the reaction. Sequential dissociation reaction mechanisms of halide ligands were systematically investigated. The exothermicity of the dissociative adsorption was found to be in the order of: TiI4 > TiBr4 > TiCl4. In addition, the precursors were observed to be more exothermic and show higher reaction rate constant when adsorbed on the –OH–terminated surface than on the –NH2–terminated surface. These observations reveal the selectivity of deposition by surface functional groups.

scholarly journals Application of in situ and ex situ Characterization of Atomic Layer Deposition Processes for Gallium Phosphide and Sodium Fluoride

2021 ◽  
Author(s):  
Sara Rose Kuraitis
Keyword(s):  
Atomic Layer Deposition ◽  
Sodium Fluoride ◽  
Gallium Phosphide ◽  
Semiconductor Device ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Ex Situ ◽  
Layer By Layer ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Atomic layer deposition (ALD) is a vapor deposition technique for synthesizing thin films with nanometer thickness control. ALD films are deposited on a substrate surface in a cyclic layer-by-layer fashion utilizing alternating doses of highly reactive chemical precursors. Precursors are selected to undergo self-limiting chemical reactions with the surface, and desired film thickness is achieved by varying the number of ALD cycles accordingly. Optimization of ALD process parameters and precursor chemistry enables conformal coating of arbitrary substrate geometries, including high aspect ratio features such as trenches. In the decades since its introduction, ALD has been used for applications across many industries, including semiconductor device manufacturing, emerging battery technologies, and optoelectronics. In this work, I present investigation of two previously reported chemistries for ALD of gallium phosphide (GaP), as well as improvements made to a custom ALD reactor to facilitate better process control and characterization. I also present a new process for thermal ALD of sodium fluoride (NaF), with potential applications in electrode coatings for sodium-ion batteries. To my knowledge, this is the first report of NaF ALD. Finally, I summarize obstacles which may be addressed in future studies that build upon this work.

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

2011 ◽  
Vol 109 (12) ◽  
pp. 124304 ◽  
Author(s):  
N. Y. Garces ◽  
V. D. Wheeler ◽  
J. K. Hite ◽  
G. G. Jernigan ◽  
J. L. Tedesco ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Graphene Surface ◽  
Layer Deposition

Influence of surface preparation on atomic layer deposition of Pt films

2012 ◽  
Vol 33 (8) ◽  
pp. 083003 ◽  
Author(s):  
Liang Ge ◽  
Cheng Hu ◽  
Zhiwei Zhu ◽  
Wei Zhang ◽  
Dongping Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pt Films

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

2008 ◽  
Vol 155 (12) ◽  
pp. H937 ◽  
Author(s):  
Annelies Delabie ◽  
David P. Brunco ◽  
Thierry Conard ◽  
Paola Favia ◽  
Hugo Bender ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Gaas Substrates ◽  
Layer Deposition
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