Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

2017 ◽  
Vol 146 (5) ◽  
pp. 052811 ◽  
Author(s):  
Paul C. Lemaire ◽  
Mariah King ◽  
Gregory N. Parsons
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Substrate Selectivity ◽  
Oxide Composition ◽  
Layer Deposition ◽  
Nucleation Mechanisms ◽  
Deposition Effect ◽  
Effect Of Surface

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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