Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

2011 ◽  
Vol 109 (12) ◽  
pp. 124304 ◽  
Author(s):  
N. Y. Garces ◽  
V. D. Wheeler ◽  
J. K. Hite ◽  
G. G. Jernigan ◽  
J. L. Tedesco ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Graphene Surface ◽  
Layer Deposition

scholarly journals Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon ◽  
2020 ◽  
Vol 169 ◽  
pp. 172-181
Author(s):  
E. Schilirò ◽  
R. Lo Nigro ◽  
S.E. Panasci ◽  
F.M. Gelardi ◽  
S. Agnello ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Early Stages ◽  
Layer Deposition

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5223-5232 ◽  
Author(s):  
Justice M. P. Alaboson ◽  
Qing Hua Wang ◽  
Jonathan D. Emery ◽  
Albert L. Lipson ◽  
Michael J. Bedzyk ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Self Assembled Monolayers ◽  
Layer Deposition ◽  
High K ◽  
Assembled Monolayers ◽  
Self Assembled

Influence of surface preparation on atomic layer deposition of Pt films

2012 ◽  
Vol 33 (8) ◽  
pp. 083003 ◽  
Author(s):  
Liang Ge ◽  
Cheng Hu ◽  
Zhiwei Zhu ◽  
Wei Zhang ◽  
Dongping Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pt Films

scholarly journals Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

2020 ◽  
Vol 10 (7) ◽  
pp. 2440 ◽  
Author(s):  
Filippo Giannazzo ◽  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Rositsa Yakimova
Keyword(s):  
Atomic Layer Deposition ◽  
Critical Role ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Organic Monolayers ◽  
Layer Deposition ◽  
High K ◽  
Deposited Metal ◽  
High K Materials ◽  
The Impact

Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology and sensing. The deposition of ultrathin high-k insulators on its surface is a key requirement for the fabrication of EG-based devices, and, in this context, atomic layer deposition (ALD) is the most suitable candidate to achieve uniform coating with nanometric thickness control. This paper presents an overview of the research on ALD of high-k insulators on EG, with a special emphasis on the role played by the peculiar electrical/structural properties of the EG/SiC (0001) interface in the nucleation step of the ALD process. The direct deposition of Al2O3 thin films on the pristine EG surface will be first discussed, demonstrating the critical role of monolayer EG uniformity to achieve a homogeneous Al2O3 coverage. Furthermore, the ALD of several high-k materials on EG coated with different seeding layers (oxidized metal films, directly deposited metal-oxides and self-assembled organic monolayers) or subjected to various prefunctionalization treatments (e.g., ozone or fluorine treatments) will be presented. The impact of the pretreatments and of thermal ALD growth on the defectivity and electrical properties (doping and carrier mobility) of the underlying EG will be discussed.

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