The importance of distributed grounding in combination with porous Si trenches for the reduction of RF crosstalk through p/sup -/ Si substrate

2003 ◽  
Vol 24 (10) ◽  
pp. 640-642 ◽  
Author(s):  
Han-Su Kim ◽  
Kyuchul Chong ◽  
Ya-Hong Xie ◽  
K.A. Jenkins
Keyword(s):  
Porous Si ◽  
Si Substrate

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

Novel Miniature DMFC With Monolithic Si Electrodes

2009 ◽  
Author(s):  
Masanori Hayase ◽  
Yosuke Saito
Keyword(s):  
Metal Layer ◽  
Catalyst Layer ◽  
Pt Catalyst ◽  
Galvanic Replacement ◽  
Porous Si ◽  
Si Substrate ◽  
Catalyst Layers ◽  
Novel Structure ◽  
Si Wafer ◽  
Immersion Plating

A through-chip porous Ru-Pt catalyst layer was fabricated on a Si wafer and a novel miniature DMFC (Direct Methanol Fuel Cell) was realized. Recently, we found that porous noble metal layer can be synthesized on Si substrate by immersion plating on a porous Si. In order to realize a DMFC with our novel structure, a porous Ru layer was synthesized on the Si substrate using the immersion plating on the porous Si, then Pt was deposited by galvanic replacement reaction on the porous Ru. The porous Ru-Pt structure showed catalytic activity on methanol oxidization. A through-chip porous Ru-Pt layer was fabricated on a Si wafer by plasma etching and monolithic electrodes with catalyst layers and fuel channels were realized. A preliminary DMFC prototype successfully demonstrated power generation of 2mW/cm2.

Films CdS Grown on Porous Si Substrate

2018 ◽  
Vol 10 (1) ◽  
pp. 01007-1-01007-4
Author(s):  
A. F. Dyadenchuk ◽  
◽  
V. V. Kidalov ◽  
Keyword(s):  
Porous Si ◽  
Si Substrate

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy

2001 ◽  
Vol 89 (9) ◽  
pp. 5215-5218 ◽  
Author(s):  
S. Saravanan ◽  
Y. Hayashi ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Chemical Beam Epitaxy ◽  
Porous Si ◽  
Si Substrate

Anisotropy of the Porous Silicon Photoluminescence

1996 ◽  
Vol 452 ◽  
Author(s):  
G. Polisski ◽  
B. Averboukh ◽  
D. Kovalev ◽  
F. Koch
Keyword(s):  
Porous Silicon ◽  
Memory Effect ◽  
Linear Polarization ◽  
Polarized Light ◽  
Optical Excitation ◽  
Polarization Degree ◽  
Porous Si ◽  
Si Substrate ◽  
Plane Distribution

AbstractPolarization memory effect in the porous Si photoluminescence is studied. The anisotropy of the linear polarization degree is found in the samples etched with polarized light-assistance. The effect is explained by the anisotropie in plane distribution of the elongated Si crystallites. Under resonant optical excitation four-fold anisotropy of the photoluminescence polarization, linked to the crystalline axes of the bulk Si substrate, is observed.

Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 1450-1454 ◽  
Author(s):  
S. Saravanan ◽  
Y. Hayashi ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Epitaxial Layers ◽  
Chemical Beam Epitaxy ◽  
Porous Si ◽  
Si Substrate
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