Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates

1989 ◽  
Vol 47 ◽  
pp. 580-581
Author(s):  
T. S. Kuan ◽  
S. S. Iyer ◽  
E. M. Yeo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Range Order ◽  
Defect Structures ◽  
Si Substrate ◽  
Growth Morphology ◽  
Si Substrates ◽  
Device Applications ◽  
20 Nm

GexSi1-x/Si heterostructures have been studied extensively because of their potential device applications. Previous GexSi1-x/Si heteroepitaxy studies have been mostly confined to growth on (100) surfaces and have focused on how growth temperature and GexSi1-x layer thickness affect growth morphology and defect generation. In this work we compare the quality of GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates. We find that these three growth directions give rise to different growth morphologies and defect structures. Strained GexSi1-x layers in a (100) GexSi1-x/Si superlattice annealed at 450 – 500°C have recently been reported to exhibit a CuPt-type long-range order. Thus, another objective of this work is to explore whether growth along the <110> and/or <111> directions can promote or suppress the onset of ordering.Superlattices consisting of 18 layers of alternating Ge0.5Si0.5 (5 nm) and Si (20 nm) were grown by molecular beam epitaxy (MBE). Before growing the superlattice, a 3D-nm-thick Si buffer layer was grown on the Si substrate.

MBE Growth of an Epitaxial Insulator-Metal-Semiconductor Structure: CaF2/CoSi2/Si(111)

1985 ◽  
Vol 54 ◽  
Author(s):  
Julia M. Phillips ◽  
W. M. Augustyniak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Semiconductor Structure ◽  
Mbe Growth

ABSTRACTWe report the first successful growth of an epitaxial insulator-metal-semiconductor structure. A layer of metallic CoSi2, followed by a layer of insulating CaF2 have been grown by molecular beam epitaxy on Si(111). The epitaxial quality of the CaF2 layer improves upon rapid thermal annealing, while the already excellent crystallinity of the CoSi2 layer is unaffected. The lattice of the CoSi2 is rotated 180° with respect to the Si lattice while the CaF2 lattice is aligned with the Si lattice.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 339-343 ◽  
Author(s):  
Shota Sambonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
Sergey Filimonov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Conditions ◽  
Si Substrate ◽  
Si Substrates ◽  
High Interest ◽  
Gas Source ◽  
Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 034903 ◽  
Author(s):  
H. Zhao ◽  
Y. Q. Xu ◽  
H. Q. Ni ◽  
S. Y. Zhang ◽  
D. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam
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