Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors

2003 ◽  
Vol 24 (7) ◽  
pp. 457-459 ◽  
Author(s):  
Tien-Fu Chen ◽  
Ching-Fa Yeh ◽  
Jen-Chung Lou
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Control ◽  
Thin Film Transistors ◽  
Si Thin Film

Crystallinity and grain boundary control of TIPS-pentacene in organic thin-film transistors for the ultra-high sensitive detection of NO2

2019 ◽  
Vol 7 (33) ◽  
pp. 10196-10202 ◽  
Author(s):  
Bingyao Shao ◽  
Yiming Liu ◽  
Xinming Zhuang ◽  
Sihui Hou ◽  
Shijiao Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Control ◽  
Thin Film Transistors ◽  
Limit Of Detection ◽  
Organic Thin Film Transistors ◽  
Sensitive Detection ◽  
Organic Thin Film ◽  
Solvent Engineering

Ultra-sensitive OTFT based NO2 sensors with a limit of detection of 1.93 ppb were realized by controlling and regulating the microstructures of TIPS-pentacene semiconducting films via solvent engineering.

NBTI-Stress Induced Grain-Boundary Degradation in Low-Temperature Poly-Si Thin-Film Transistors

2007 ◽  
Author(s):  
Chih-Yang Chen ◽  
Ming-Wen Ma ◽  
Wei-Cheng Chen ◽  
Hsiao-Yi Lin ◽  
Kuan-Lin Yeh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Si Thin Film

Effect of the Grain Growth Process on the Characteristics for the Excimer Laser Crystallized Poly-Si Thin Film Transistors

1995 ◽  
Vol 403 ◽  
Author(s):  
Hiroshi Okumura ◽  
Hiroshi Tanabe ◽  
Fujio Okumura
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Lower Energy ◽  
Growth Process ◽  
The Other ◽  
Columnar Grains ◽  
Si Thin Film

AbstractWe have found, for excimer laser crystallized poly-Si thin films, that there are two different grain growth processes that depend on the energy density. Columnar grains grow laterally at lower energy densities. The other grain growth process at higher energy densities is shown to be secondary grain growth caused by a less oriented structure with fine granular grains. A TFT with the maximum mobility is obtained at the border for the lower energy grain growth. Grain boundary and intragrain defects around grain boundary formed through the secondary grain growth reduce the mobility in spite of considerable grain enlargement.

Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1721-1726 ◽  
Author(s):  
G. A. Armstrong ◽  
S. Uppal ◽  
S. D. Brotherton ◽  
J. R. Ayres
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Si Thin Film
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