Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

2003 ◽  
Vol 24 (5) ◽  
pp. 339-341 ◽  
Author(s):  
Min Yang ◽  
E.P. Gusev ◽  
Meikei Ieong ◽  
O. Gluschenkov ◽  
D.C. Boyd ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Gate Dielectrics ◽  
Substrate Orientation

The effect of silicon substrate orientation on the formation of Gd-silicide phases

1996 ◽  
Vol 102 ◽  
pp. 159-162 ◽  
Author(s):  
Gy. Molnár ◽  
G. Pet″o ◽  
E. Zsoldos ◽  
Z.E. Horváth ◽  
N.Q. Khánh
Keyword(s):  
Silicon Substrate ◽  
Substrate Orientation

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Dependence of selective anodization characteristics on silicon substrate orientation

2005 ◽  
Vol 2 (9) ◽  
pp. 3389-3393 ◽  
Author(s):  
S. Uehara ◽  
K. Kubota ◽  
K. Nagaoka ◽  
S. Yoshida ◽  
T. Matsubara
Keyword(s):  
Silicon Substrate ◽  
Substrate Orientation

The Effects of Substrate Orientation on Galvanic Growth of ZnO Structures

2017 ◽  
Vol 888 ◽  
pp. 304-308 ◽  
Author(s):  
Kuan Ying Kok ◽  
Inn Khuan Ng ◽  
Nur Ubaidah Saidin ◽  
Thye Foo Choo ◽  
Boon Siong Wee ◽  
...  
Keyword(s):  
Electrolyte Solution ◽  
Silicon Substrate ◽  
Driving Force ◽  
Zno Nanorods ◽  
Si Substrate ◽  
Substrate Orientation ◽  
Reduction Potentials ◽  
The Difference ◽  
Hexagonal Arrays

Electrochemical route has been a favorite technique for the fabrication of ZnO as it is relatively cheap and capable of producing abundance amount of materials. In this paper, we investigate the morphologies of hydrothermally synthesized ZnO structures assisted by galvanic process on conducting Au-coated silicon substrate. To induce the galvanic process, the substrate was in contact with aluminum so that the difference in the reduction potentials between the two materials provided the driving force for the formation of the ZnO structures. The galvanic process was found to promote compact and anisotropy growth of ZnO nanorods along the (001) plane. It was also found that substrate orientations in the electrolyte solution had an important bearing on the morphologies of ZnO. Well aligned periodic hexagonal arrays of ZnO nanorods of homogeneous diameters were obtained on gold-coated Si substrate with face-down orientation in the electrolyte solution.

Silicon substrate orientation influence on structural and magnetic properties of BaFe12O19 thin films obtained by RF magneton sputtering

2020 ◽  
Vol 504 ◽  
pp. 166705
Author(s):  
Vinicius Pretti Rossi ◽  
Ricardo Pereira Bonini ◽  
André Marino Gonçalves ◽  
Alexandre José Gualdi ◽  
Jose Antônio Eiras ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Silicon Substrate ◽  
Substrate Orientation ◽  
Structural And Magnetic Properties

The Features of the Lateral Photovoltaic Effect in the Fe3O4/SiO2/n-Si Structure Depending on Silicon Substrate Orientation

2020 ◽  
Vol 312 ◽  
pp. 98-104
Author(s):  
Tatiana A. Pisarenko ◽  
Vladimir V. Korobtsov ◽  
Vyacheslav V. Balashev ◽  
Artem A. Dimitriev ◽  
Sophie V. Bondarenko
Keyword(s):  
Silicon Substrate ◽  
Photovoltaic Effect ◽  
Surface States ◽  
Substrate Orientation ◽  
Higher Sensitivity

We report on the results of a study of the lateral photovoltaic effect in theFe3O4/SiO2/n-Si structure grown on Si(001) and Si(111) substrates. It was found that in theFe3O4/SiO2/Si(001) structure the LPE sensitivity is a half times as much, and the photoresponseparameters are about 3 times less than those in the Fe3O4/SiO2/Si(111) structure. It is supposed thata higher sensitivity and faster photoresponse in the Fe3O4/SiO2/Si(001) structure, compared with theFe3O4/SiO2/Si(111) structure, are caused by a lower density of surface states at the SiO2/Si(001)interface than at the SiO2/Si(111) interface.

Sign in / Sign up

Export Citation Format

Share Document