Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

Y. Uraoka; N. Hirai; H. Yano; T. Hatayama; T. Fuyuki

doi:10.1109/led.2003.810877

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

IEEE Electron Device Letters ◽

10.1109/led.2003.810877 ◽

2003 ◽

Vol 24 (4) ◽

pp. 236-238 ◽

Cited By ~ 6

Author(s):

Y. Uraoka ◽

N. Hirai ◽

H. Yano ◽

T. Hatayama ◽

T. Fuyuki

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Time Resolved ◽

Hot Carrier ◽

Carrier Analysis ◽

Si Thin Film

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Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope

Digest. International Electron Devices Meeting, ◽

10.1109/iedm.2002.1175907 ◽

2003 ◽

Cited By ~ 1

Author(s):

Y. Uraoka ◽

N. Hirai ◽

H. Yano ◽

T. Hatayama ◽

T. Fuyuki

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Time Resolved ◽

Si Thin Film

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Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Thin-Film Transistors towards High Reliability

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.80-81.349 ◽

2001 ◽

Vol 80-81 ◽

pp. 349-360

Author(s):

Takashi Fuyuki ◽

Yukiharu Uraoka

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Reliability ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Si Thin Film

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Experimental evidence of grain-boundary related hot-carrier degradation mechanism in low-temperature poly-Si thin-film-transistors

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269250 ◽

2004 ◽

Cited By ~ 6

Author(s):

T. Yoshida ◽

K. Yoshino ◽

M. Takei ◽

A. Hara ◽

N. Sasaki ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Grain Boundary ◽

Experimental Evidence ◽

Thin Film Transistors ◽

Degradation Mechanism ◽

Hot Carrier ◽

Si Thin Film ◽

Hot Carrier Degradation

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Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Poly-Si Thin-Film-Transistors

10.7567/ssdm.2002.d-9-5 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Yoshida ◽

Y. Ebiko ◽

M. Takei ◽

N. Sasaki ◽

T. Tsuchiya

Keyword(s):

Thin Film ◽

Low Temperature ◽

Grain Boundary ◽

Thin Film Transistors ◽

Degradation Mechanism ◽

Hot Carrier ◽

Si Thin Film ◽

Hot Carrier Degradation

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Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film Transistors

10.7567/ssdm.2006.p-3-20 ◽

2006 ◽

Author(s):

Chih-Yang Chen ◽

Jam-Wem Lee ◽

Wei-Cheng Chen ◽

Hsiao-Yi Lin ◽

Kuan-Lin Yeh ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Hot Carrier ◽

Stress Effects ◽

Bias Temperature Instability ◽

Si Thin Film

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New evaluation method for reliability of poly-Si thin film transistors using pico-second time-resolved emission microscope

International Conference on Microelectronic Test Structures, 2003. ◽

10.1109/icmts.2003.1197457 ◽

2003 ◽

Author(s):

Y. Uraoka ◽

N. Hirai ◽

H. Yano ◽

T. Hatayama ◽

T. Fuyuki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Evaluation Method ◽

Time Resolved ◽

Si Thin Film

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Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO/sub 2/ as gate insulator and its reliability

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays ◽

10.1109/amlcd.1995.540966 ◽

2002 ◽

Author(s):

Ching-Lin Fan ◽

Ching-Fa Yeh ◽

Hsiung-Kuang Tsai ◽

Water Lur ◽

Po-Wen Yen

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Gate Insulator ◽

Si Thin Film

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Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2019.2900075 ◽

2019 ◽

pp. 1-1

Author(s):

Shin-Ping Huang ◽

Yu-Zhe Zheng ◽

Ting-Chang Chang ◽

Bo-Wei Chen ◽

Po-Hsun Chen ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Trench Structure ◽

Mechanical Bending ◽

Si Thin Film

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Peripheral circuit designs using low-temperature p-type poly-Si thin-film transistors

Journal of the Society for Information Display ◽

10.1889/1.2196517 ◽

2006 ◽

Vol 14 (4) ◽

pp. 403 ◽

Cited By ~ 1

Author(s):

Woo-Jin Nam ◽

Jae-Hoon Lee ◽

Hye-Jin Lee ◽

Hee-Sun Shin ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

P Type ◽

Si Thin Film

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Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4213 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4213-4217 ◽

Cited By ~ 20

Author(s):

Satoshi Inoue ◽

Satoshi Takenaka ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Self Heating ◽

Si Thin Film ◽

Low Temperature Process

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