AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 ◽  
Author(s):  
P. Moens ◽  
A. Banerjee ◽  
P. Coppens ◽  
F. Declercq ◽  
M. Tack
Keyword(s):  
High Voltage ◽  
Power Device ◽  
High Current ◽  
Device Technology

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors

Mode competition in a high-current high-voltage Gyro-BWO experiment

1995 ◽  
Author(s):  
Thomas A. Spencer ◽  
Ralph A. N. Peredo ◽  
Moe J. Arman ◽  
Kyle J. Hendricks ◽  
Kirk E. Hackett ◽  
...  
Keyword(s):  
High Voltage ◽  
Mode Competition ◽  
High Current

High voltage, high current stabilized power supplies

1962 ◽  
Vol 39 (2) ◽  
pp. 99-99
Author(s):  
Electronic Machine Co Ltd.
Keyword(s):  
High Voltage ◽  
Power Supplies ◽  
High Current

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

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