Integration of CMOS Logic Circuits with Lateral Power MOSFET

2013 ◽  
Author(s):  
Zhi-Yuan Cui ◽  
Jung-Woong Park ◽  
Chan-Soo Lee ◽  
Nam-Soo Kim
Keyword(s):  
Logic Circuits ◽  
Power Mosfet

Fault effects in asynchronous sequential logic circuits

1993 ◽  
Vol 140 (6) ◽  
pp. 327-332
Author(s):  
M.-D. Shieh ◽  
C.-L. Wey ◽  
P.D. Fisher
Keyword(s):  
Logic Circuits ◽  
Sequential Logic

DIGITALIZATION OF LABOR MIGRATION PROCESSES IN UZBEKISTAN. WORLD EXPERIENCE

2020 ◽  
Vol 4 (3) ◽  
pp. 29-39
Author(s):  
Sulkhiya Gazieva ◽  
Keyword(s):  
Labor Market ◽  
Technological Change ◽  
Labor Migration ◽  
Smart Phone ◽  
Logic Circuits ◽  
Digital Logic ◽  
The Internet ◽  
The Future

The future of labor market depends upon several factors, long-term innovation and the demographic developments. However, one of the main drivers of technological change in the future is digitalization and central to this development is the production and use of digital logic circuits and its derived technologies, including the computer,the smart phone and the Internet. Especially, smart automation will perhaps not cause e.g.regarding industries, occupations, skills, tasks and duties

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

Sign in / Sign up

Export Citation Format

Share Document