Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 15795-15799 ◽  
Author(s):  
Qi Fu ◽  
Wenhui Wang ◽  
Lei Yang ◽  
Jian Huang ◽  
Jingyu Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Disulfide ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

2016 ◽  
Vol 37 (8) ◽  
pp. 984-989
Author(s):  
巩 哲 GONG Zhe ◽  
何大伟 HE Da-wei ◽  
王永生 WANG Yong-sheng ◽  
许海腾 XU Hai-teng ◽  
董艳芳 DONG Yan-fang
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controllable Synthesis ◽  
High Quality ◽  
Large Size

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

2017 ◽  
Vol 897 ◽  
pp. 55-58 ◽  
Author(s):  
Naoto Ishibashi ◽  
Keisuke Fukada ◽  
Akira Bandoh ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Chemical Vapor Deposition ◽  
High Voltage ◽  
Vapor Deposition ◽  
Basal Plane ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
High Quality ◽  
Bipolar Devices ◽  
Device Applications ◽  
P Type

This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm-2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm-3 to 1E+19 cm-3 range.

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

2011 ◽  
Vol 4 (11) ◽  
pp. 115501 ◽  
Author(s):  
Binh-Tinh Tran ◽  
Edward-Yi Chang ◽  
Kung-Liang Lin ◽  
Yuen-Yee Wong ◽  
Kartika Chandra Sahoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Controllable synthesis of AlN nanostructures and their photoluminescence

CrystEngComm ◽  
2017 ◽  
Vol 19 (39) ◽  
pp. 5940-5945 ◽  
Author(s):  
Longhai Shen ◽  
Wei Lv ◽  
Nan Wang ◽  
Lijun Wu ◽  
Dongli Qi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
Particle Layer

AlN nanostructures with controllable morphologies are synthesized on a Si substrate with an Al particle layer as a self-catalyst via a chemical vapor deposition (CVD) technique under atmospheric pressure.

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