Low Temperature Crystallization of Bismuth Zinc Niobate Thin Films by Pulsed Laser Annealing

2006 ◽  
Author(s):  
Junling Wang ◽  
Jiangong Cheng ◽  
Lili Tian ◽  
Tanawadee Dechakupt ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Low Temperature Crystallization ◽  
Bismuth Zinc Niobate ◽  
Temperature Crystallization

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment

2020 ◽  
Vol 8 (11) ◽  
pp. 3669-3677
Author(s):  
Sheng-Han Yi ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Ferroelectric Phase ◽  
Atomic Layer ◽  
Treatment Technique ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Crystallization and ferroelectricity with high endurance are achieved in ZrO2 thin films at low temperature using an atomic layer plasma treatment technique.

Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

2010 ◽  
Vol 1268 ◽  
Author(s):  
Ashish Bhatia ◽  
Phillip Dale ◽  
Matt Nowell ◽  
Michael Scarpulla
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Laser Processing ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Ultra Violet ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
The Cost

AbstractCuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

Lattice Guiding for Low Temperature Crystallization of Rhombohedral Perovskite-Structured Oxide Thin Films

2010 ◽  
Vol 10 (2) ◽  
pp. 761-764 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
David R. G. Mitchell ◽  
Arnan Mitchell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxide Thin Films ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization
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