2011 International Meeting for Future of Electron Devices
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781612841458

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944869 ◽

2011 ◽

Author(s):

Guobin Wei ◽

Hideki Murakami ◽

Tomohiro Fujioka ◽

Akio Ohta ◽

Yuta Goto ◽

...

Keyword(s):

Resistive Switching ◽

Switching Characteristics

Download Full-text

Performance improvement of metal-gate/high-k CMOS by NiPt-silicidation using laser annealing

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944834 ◽

2011 ◽

Author(s):

Y. Yamamoto ◽

T. Yamaguchi ◽

Y. Kawasaki ◽

S. Kudo ◽

J. Tsuchimoto ◽

...

Keyword(s):

Performance Improvement ◽

Laser Annealing ◽

Metal Gate ◽

High K

Download Full-text

On-chip Robotics for biomedical innovations

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944828 ◽

2011 ◽

Author(s):

Fumihito Arai

Keyword(s):

On Chip

Download Full-text

Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944872 ◽

2011 ◽

Author(s):

Kosuke Bundo ◽

Takanori Imazawa ◽

Mutsunori Uenuma ◽

Yasuaki Ishikawa ◽

Heiji Watanabe ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Metal Nanoparticles ◽

Low Temperature Crystallization ◽

Temperature Crystallization

Download Full-text

Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944880 ◽

2011 ◽

Author(s):

Tsuyoshi Segawa ◽

Yohei Yamaguchi ◽

Hayami Hashimoto ◽

Mutsumi Kimura

Keyword(s):

Hall Effect ◽

P Type

Download Full-text

Application of endohedral iron-oxide ferritin to resistive memory

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944866 ◽

2011 ◽

Author(s):

Yasuhiro Kakihara ◽

Mutsunori Uenuma ◽

Naofumi Okamoto ◽

Kentaro Kawano ◽

Bin Zheng ◽

...

Keyword(s):

Iron Oxide ◽

Resistive Memory

Download Full-text

Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944845 ◽

2011 ◽

Cited By ~ 2

Author(s):

Shinji Fujita ◽

Toshiya Kotoug ◽

Yasuhisa Omura

Keyword(s):

Minority Carrier ◽

Carrier Diffusion ◽

Pn Junction

Download Full-text

New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944840 ◽

2011 ◽

Author(s):

Jia-Chun Lin ◽

Chu-Yu Chen ◽

Meng-Hua Tsa

Keyword(s):

Monte Carlo ◽

Optimization Method ◽

Statistical Optimization

Download Full-text

Social infrastructure watch by RF recognition system and sensors

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944839 ◽

2011 ◽

Author(s):

Takuya Nishimura ◽

Yukio Iida

Keyword(s):

Recognition System ◽

Social Infrastructure

Download Full-text

Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944854 ◽

2011 ◽

Cited By ~ 1

Author(s):

T. Saito ◽

K. Nitanda ◽

A. Syahiman ◽

H. Tokuda ◽

M. Kuzuhara

Keyword(s):

Leakage Current ◽

Schottky Diodes ◽

Temperature Dependent ◽

Reverse Leakage Current

Download Full-text

2011 International Meeting for Future of Electron DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

Performance improvement of metal-gate/high-k CMOS by NiPt-silicidation using laser annealing

On-chip Robotics for biomedical innovations

Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors

Application of endohedral iron-oxide ferritin to resistive memory

Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction

New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models

Social infrastructure watch by RF recognition system and sensors

Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes

2011 International Meeting for Future of Electron Devices
Latest Publications