Electrooptic characterization of PLT/sub 28/ thin films by a guided-wave optical technique

Author(s):  
E. Dogheche ◽  
A. Boudrioua ◽  
D. Remiens ◽  
J.C. Loulergue
2013 ◽  
Vol 38 (7) ◽  
pp. 1037 ◽  
Author(s):  
Floriane Leroy ◽  
Anthony Rousseau ◽  
Sandrine Payan ◽  
Elhadj Dogheche ◽  
David Jenkins ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura

ABSTRACTEpitaxial and highly oriented lead titanate based thin films were prepared by a sol-gel process using non-hydrolyzed methoxyethoxide precursors and RTA process. PbTiO3 crystallized with preferred (001) or (100) orientation on SrTiO3 (100) and MgO (100). Solid phase (001) oriented epitaxial growth of PZT on SrTio3 was observed at 425°C, directly from the amorphous phase. That of PZT on MgO was observed at temperatures above 550°C, after the formation of pyrochlore phase. The PZT on SrTiO3 had a single (001) orientation and rocking curve full width at half maximum less than 0.08°. PZT showed a weak preferred (111) orientation on sapphire (0001) substrates, while highly (111) oriented PLT thin films were obtained on them. The guided wave modes were excited by a prism coupling for PZT thin films crystallized on SrTiO3 and MgO. Electrical properties of epitaxial PZT and PLT thin films on Nb-SrTiO3 substrates were characterized.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 663-666
Author(s):  
L. VAILLANT ◽  
O. VIGIL ◽  
G. CONTRERAS-PUENTE ◽  
C. MEJÍA-GARCÍA

The optical and morphological properties of (ZnO)x(CdO)1-x semiconductor thin films with x composition in the range 0 □ x □ 0.5 are studied by the photoluminescence optical technique (PL), and the Scanning Electron Microscopy (SEM). The evolution of the band associated with oxygen content in the films is observed and described as a function of the film composition and the thermal annealing. The surface morphology is presented, where two different binary semiconducting species can be discerned in proportions dependent on the films composition.


Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem

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