Effect of Laser Irradlation on the Electrical Properties of Pb<inf>0.8</inf>Sn<inf>0.2</inf>Te Thin Films Using Metal-Insulator-Semiconductor Structures

Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical properties of metal-insulator-metal and metal-insulator-semiconductor structures containing Langmuir-Blodgett insulating multilayers

Thin Solid Films ◽

10.1016/0040-6090(89)90173-9 ◽

1989 ◽

Vol 179 (1-2) ◽

pp. 121-127 ◽

Cited By ~ 12

Author(s):

F Kaneko ◽

M Shibata ◽

Y Inaba ◽

S Kobayashi

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Semiconductor Structures ◽

Metal Insulator Metal

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Cited By ~ 4

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Thin Films ◽

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Nature of Impurities in .pi.-Conjugated Polymers Prepared by Ferric Chloride and Their Effect on the Electrical Properties of Metal-Insulator-Semiconductor Structures

Chemistry of Materials ◽

10.1021/cm00052a006 ◽

1995 ◽

Vol 7 (4) ◽

pp. 631-641 ◽

Cited By ~ 65

Author(s):

Mohamed S. A. Abdou ◽

Xiaotang Lu ◽

Zi W. Xie ◽

Frank Orfino ◽

M. Jamal Deen ◽

...

Keyword(s):

Electrical Properties ◽

Conjugated Polymers ◽

Ferric Chloride ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Pi Conjugated ◽

Pi Conjugated Polymers

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Electrical properties of InPxOy‐InP metal‐insulator‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.348580 ◽

1991 ◽

Vol 69 (5) ◽

pp. 3130-3134 ◽

Cited By ~ 13

Author(s):

K. Hattori ◽

Y. Torii

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Fabrication and electrical properties of epitaxial PbTe metal‐insulator‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.326725 ◽

1979 ◽

Vol 50 (9) ◽

pp. 5815-5819 ◽

Cited By ~ 6

Author(s):

P. H. Zimmermann ◽

M. E. Mathews ◽

D. E. Joslin

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Thin Solid Films ◽

10.1016/0040-6090(83)90430-3 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 119-140 ◽

Cited By ~ 153

Author(s):

H Hasegawa ◽

T Sawada

Keyword(s):

Electrical Properties ◽

Compound Semiconductor ◽

Interface States ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Semiconductor Interfaces

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Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Journal of Applied Physics ◽

10.1063/1.1592625 ◽

2003 ◽

Vol 94 (4) ◽

pp. 2642-2653 ◽

Cited By ~ 10

Author(s):

I. Mártil ◽

A. del Prado ◽

E. San Andrés ◽

G. González Dı́az ◽

F. L. Martı́nez

Keyword(s):

Thin Films ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical properties of SiInxPyOz‐InSb metal‐insulator‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.347240 ◽

1991 ◽

Vol 69 (3) ◽

pp. 1506-1509

Author(s):

K. Hattori ◽

Y. Torii

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Effect of Laser Irradlation on the Electrical Properties of Pb0.8Sn0.2Te Thin Films Using Metal-Insulator-Semiconductor Structures

Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Electrical properties of metal-insulator-metal and metal-insulator-semiconductor structures containing Langmuir-Blodgett insulating multilayers

Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Nature of Impurities in .pi.-Conjugated Polymers Prepared by Ferric Chloride and Their Effect on the Electrical Properties of Metal-Insulator-Semiconductor Structures

Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Electrical properties of InPxOy‐InP metal‐insulator‐semiconductor structures

Fabrication and electrical properties of epitaxial PbTe metal‐insulator‐semiconductor structures

On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Electrical properties of SiInxPyOz‐InSb metal‐insulator‐semiconductor structures

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