Study of dry delineation with Argon sputtering on FIB-milled copper profile

2015 ◽  
Author(s):  
P. C. Ang ◽  
S. Lee ◽  
Z. Q. Mo ◽  
Y. J. Yang ◽  
S. P. Zhao ◽  
...  
Keyword(s):  
Argon Sputtering

Imaging the cell surface: Argon sputtering to expose inner cell structures

2004 ◽  
Vol 63 (2) ◽  
pp. 115-121 ◽  
Author(s):  
Gelsomina De Stasio ◽  
Bradley H. Frazer ◽  
Marco Girasole ◽  
Lisa M. Wiese ◽  
Ewa K. Krasnowska ◽  
...  
Keyword(s):  
Cell Surface ◽  
Cell Structures ◽  
Argon Sputtering

Effect of surface impurities and argon sputtering on deuterium permeation of nickel

1986 ◽  
Vol 141-143 ◽  
pp. 249-252 ◽  
Author(s):  
Tsukasa Kiyoshi ◽  
Takashi Namba ◽  
Kenji Yamaguchi ◽  
Michio Yamawaki
Keyword(s):  
Argon Sputtering ◽  
Effect Of Surface

Micro-Indentation and Micro-Scratch Tests on Sub-Micron Carbon Films

1988 ◽  
Vol 130 ◽  
Author(s):  
T. W. Wu ◽  
R. A. Burn ◽  
M. M. Chen ◽  
P. S. Alexopoulos
Keyword(s):  
Carbon Film ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Argon Sputtering ◽  
Scratch Tests ◽  
Sputtering Pressure ◽  
Micro Indentation ◽  
Poor Adhesion ◽  
Mtorr Argon ◽  
Hardness Depth

AbstractMicro-indentation and micro-scratch techniques were used to characterize the hardness and the adhesion strength of 0.11 μm thick sputtered carbon f-ilms on Silicon substrates. Hardness depth profiles and critical loads were measured using a microindenter under indentation and scratch testing modes, respectively. The carbon film with 6 mtorr argon sputtering pressure shows better practical adhesion (or higher critical load) and slightly higher hardness. The indentation fracture phenomenon observed on the 30 mtorr film is closely related to its poor adhesion. The failure mechanism will also be discussed.

scholarly journals XPS Depth Profile of Mica Using Argon Sputtering.

Hyomen Kagaku ◽  
1998 ◽  
Vol 19 (12) ◽  
pp. 826-830
Author(s):  
Takeo EBINA ◽  
Takashi IWASAKI
Keyword(s):  
Depth Profile ◽  
Argon Sputtering ◽  
Xps Depth Profile

Preparation of Metal Nanosuspensions by High-Pressure DC-Sputtering on Running Liquids

1996 ◽  
Vol 457 ◽  
Author(s):  
M. Wagener ◽  
B. S. Murty ◽  
B. Günther
Keyword(s):  
Particle Size ◽  
High Pressure ◽  
Particle Size Distribution ◽  
Pressure Range ◽  
Narrow Particle Size Distribution ◽  
Descriptive Model ◽  
Mean Particle Size ◽  
Dc Sputtering ◽  
The Mean ◽  
Argon Sputtering

ABSTRACTA modified VERL-process (Vacuum evaporation on running liquids) employing high pressure magnetron sputtering has been used for the preparation of suspensions with metal nanoparticles. The method has been tested for Ag- and Fe-suspensions by varying the pressure of the Argon sputtering atmosphere in the range of 1 to 30 Pa. A narrow particle size distribution with a mean particle size ranging from 5–18 nm has been found. The mean particle size increases with increasing Argon pressure in the pressure range under investigation. A descriptive model for the process of particle formation as a function of sputtering gas pressure is given.

The Reaction between thin Ni and Co Films and their Disilicides

1983 ◽  
Vol 25 ◽  
Author(s):  
E.C. Cahoon ◽  
C.M. Comrie ◽  
R. Pretorius
Keyword(s):  
Driving Forces ◽  
Heat Of Formation ◽  
Factors Affecting ◽  
Various Boundary Conditions ◽  
Deposited Metal ◽  
The Stability ◽  
Partial Dissociation ◽  
Argon Sputtering ◽  
Complete Dissociation ◽  
Kinetic Barriers

ABSTRACTRutherford backscattering has been used to study metal/disilicide thin film interactions for Ni and Co. Upon heating, the metal first reacted with the disilicide to form Ni2Si and Co2Si, respectively. After complete consumption of the free metal, the monosilicide phase was found to form at temperatures between 350°C and 550°C. In the case of Co it was found that after all the metal had been converted to CoSi in this way, the reaction stopped. In the Si<>/NiSi2/Ni system, however, all the disilicide converted to NiSi, even though the thickness of the deposited metal was insufficient to account for this. For this to occur, the disilicide had to dissociate into NiSi and Si, with the excess silicon regrown epitaxially on the silicon substrate.The stability of NiSi2 under various boundary conditions was investigated to determine the factors affecting dissociation. Partial dissociation was found to occur when the NiSi2/Ni reaction proceeded on an inert SiO2 substrate. The disilicide was stable, however, in the Si<>/NiSi/NiSi2 structure. Argon sputtering at temperature was found to induce complete dissociation of NiSi2 on single-crystal Si. We believe that the NiSi2 instability is due to the very small heat of formation from the monosilicide. In such a case, the thermodynamic driving forces are small enough that the reaction can be significantly influenced by the presence of kinetic barriers.

Properties of YBCO films prepared by pure argon sputtering

1991 ◽  
Vol 185-189 ◽  
pp. 1973-1974
Author(s):  
Toshiyuki Matsui ◽  
Takeshi Suzuki ◽  
Hiroshi Kimura ◽  
Koichi Tsuda ◽  
Megumi Nagano ◽  
...  
Keyword(s):  
Ybco Films ◽  
Pure Argon ◽  
Argon Sputtering
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