SCM application in localized 2D dopant profiling

2013 ◽  
Author(s):  
Lee Siew Shyuan ◽  
Kenny Gan Chye Siong ◽  
Lee Nean Sern
Keyword(s):  
Dopant Profiling

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Resistance and dopant profiling along freestanding GaAs nanowires

2013 ◽  
Vol 103 (14) ◽  
pp. 143104 ◽  
Author(s):  
Stefan Korte ◽  
Matthias Steidl ◽  
Werner Prost ◽  
Vasily Cherepanov ◽  
Bert Voigtländer ◽  
...  
Keyword(s):  
Dopant Profiling ◽  
Gaas Nanowires

scholarly journals An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale

2020 ◽  
Vol 26 (1) ◽  
pp. 76-85
Author(s):  
Raghda Makarem ◽  
Filadelfo Cristiano ◽  
Dominique Muller ◽  
Pier Francesco Fazzini
Keyword(s):  
Measurement Error ◽  
Mass Density ◽  
Estimation Procedure ◽  
Observation Time ◽  
Test Structure ◽  
Profile Measurement ◽  
Rutherford Back Scattering ◽  
Dopant Profiling ◽  
Absorption Correction ◽  
Total Measurement Error

AbstractIn this paper, an improved quantification technique for STEM/EDX measurements of 1D dopant profiles based on the Cliff-Lorimer equation is presented. The technique uses an iterative absorption correction procedure based on density models correlating the local mass density and composition of the specimen. Moreover, a calibration and error estimation procedure based on linear regression and error propagation is proposed in order to estimate the total measurement error in the dopant density. The proposed approach is applied to the measurement of the As profile in a nanodevice test structure. For the calibration, two crystalline Si specimens implanted with different As doses have been used, and the calibration of the Cliff-Lorimer coefficients has been carried out using Rutherford Back Scattering measurements. The As profile measurement has been carried out on an FinFET test structure, showing that quantitative results can be obtained in the nanometer scale and for dopant atomic densities lower than 1%. Using the proposed approach, the measurement error and detection limit for our experimental setup are calculated and the possibility to improve this limit by increasing the observation time is discussed.

Scanning electric field sensing for semiconductor dopant profiling

2002 ◽  
Vol 195 (1-4) ◽  
pp. 146-154 ◽  
Author(s):  
M.S. Crosser ◽  
S.H. Tessmer ◽  
Ruby N. Ghosh
Keyword(s):  
Electric Field ◽  
Dopant Profiling ◽  
Electric Field Sensing ◽  
Field Sensing
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