Resistance and dopant profiling along freestanding GaAs nanowires

2013 ◽  
Vol 103 (14) ◽  
pp. 143104 ◽  
Author(s):  
Stefan Korte ◽  
Matthias Steidl ◽  
Werner Prost ◽  
Vasily Cherepanov ◽  
Bert Voigtländer ◽  
...  
Keyword(s):  
Dopant Profiling ◽  
Gaas Nanowires

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

scholarly journals Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering

2021 ◽  
pp. 2104671
Author(s):  
Bin Zhang ◽  
Jan E. Stehr ◽  
Ping‐Ping Chen ◽  
Xingjun Wang ◽  
Fumitaro Ishikawa ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Gaas Nanowires ◽  
Structure Engineering

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Kinetics of Au–Ga Droplet Mediated Decomposition of GaAs Nanowires

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3498-3504 ◽  
Author(s):  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
Axel R. Persson ◽  
Reine Wallenberg ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Gaas Nanowires ◽  
Kinetics Of

scholarly journals Field Emission from Self-Catalyzed GaAs Nanowires

Nanomaterials ◽  
2017 ◽  
Vol 7 (9) ◽  
pp. 275 ◽  
Author(s):  
Filippo Giubileo ◽  
Antonio Di Bartolomeo ◽  
Laura Iemmo ◽  
Giuseppe Luongo ◽  
Maurizio Passacantando ◽  
...  
Keyword(s):  
Field Emission ◽  
Gaas Nanowires

Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism

2011 ◽  
Vol 99 (8) ◽  
pp. 083114 ◽  
Author(s):  
Ning Han ◽  
Alvin T. Hui ◽  
Fengyun Wang ◽  
Jared J. Hou ◽  
Fei Xiu ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Crystal Phase ◽  
Growth Orientation ◽  
Gaas Nanowires

Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

Nano Letters ◽  
2010 ◽  
Vol 10 (5) ◽  
pp. 1836-1841 ◽  
Author(s):  
M. R. Ramdani ◽  
E. Gil ◽  
Ch. Leroux ◽  
Y. André ◽  
A. Trassoudaine ◽  
...  
Keyword(s):  
Fast Growth ◽  
Gaas Nanowires
Sign in / Sign up

Export Citation Format

Share Document