Physical failure analysis cases by Electron Beam Absorbed Current & Electron Beam Induced Current detection on nano-probing SEM system

2010 ◽  
Author(s):  
Wen Pin Lin ◽  
Hsiu Ju Chang
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Current Detection

Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits

1997 ◽  
Author(s):  
J. C. H. Phang ◽  
S. Kolachina ◽  
D. S. H. Chan
Keyword(s):  
Experimental Data ◽  
Electron Beam ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Imaging Technique ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Pn Junctions ◽  
Single Contact

Abstract Single Contact Electron Beam Induced Current (SCEBIC) microscopy, a new junction imaging technique suitable for visualization of unconnected pn junctions in integrated circuits is presented. By using the substrate contact alone of a die, the SCEBIC approach eliminates the need to connect a junction to the imaging electronics as is done in the conventional Electron Beam Induced Current (EBIC) technique. The principles of SCEBIC are discussed and experimental data which validate the SCEBIC approach for imaging of pn junctions is presented. Examples of SCEBIC images are presented and applications of SCEBIC microscopy in IC failure analysis are discussed.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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