Au nanocrystal flash memory reliability and failure analysis

2008 ◽  
Author(s):  
Pawan K. Singh ◽  
Kaushal K. Singh ◽  
Ralf Hofmann ◽  
Karl Armstrong ◽  
Nety Krishna ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flash Memory

Split-Gate Flash Memory Cell Odd/Even Fail Pattern Failure Analysis

2011 ◽  
Author(s):  
Re-Long Chiu ◽  
Jason Higgins ◽  
Shu-Lan Ying ◽  
Jones Chung ◽  
Gang Wang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Flash Memory ◽  
Voltage Drop ◽  
Memory Cell ◽  
Failure Pattern ◽  
Cell Current ◽  
Photo Alignment ◽  
Flash Memory Cell ◽  
Embedded Flash

Abstract A NOR-type split gate embedded Flash memory product program marginal fail with odd/even word line failure pattern. Based on cell current comparison, programming cycling tests and voltage drop measurements, the invisible cause of even/odd cells weak program failure mechanism was verified and confirmed visibly by cross sectioning and junction stain treatment. This problem was then solved by tightening photo alignment control and exposure conditions.

Production Yield Enhancement through Failure Analysis Investigation

2009 ◽  
Author(s):  
Rajesh Medikonduri
Keyword(s):  
Failure Analysis ◽  
Flash Memory ◽  
Production Yield ◽  
Yield Enhancement ◽  
Related Issue ◽  
Data Loss ◽  
Current Testing ◽  
Corrective Actions ◽  
The One

Abstract Production yield verification for a complex device, such as the flash memory, is a problem of primary importance due to high design density and current testing capabilities of such design. In this paper, the flow byte issue in the one time programmable block is investigated through physical failure analysis (PFA). The customer reported fail for this unit was flow byte error with flipped data loss in one of the bit. Various experiments were done on numerous units to identify the yield related issue and prevent shipment of such units to customers. The case study from this paper is beneficial to the FA community by showing the exact methodology in identifying the problem, its containment, and implementation of corrective actions on the ATE to prevent shipment of low yield units to customer. The yield was enhanced by implementing the containment and corrective actions on the ATE.

Failure Analysis of Single-Bit Charge Loss after Stress and Studies on Silicon Dopant Profile

2016 ◽  
Author(s):  
Rong-Wei Gong ◽  
Hsiao-Tien Chang ◽  
Hui-Wen Chan ◽  
Lian-Feng Lee ◽  
Chih-Ching Shih ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flash Memory ◽  
Degradation Process ◽  
Electrical Failure ◽  
Dopant Profile ◽  
Analysis Technique ◽  
Drain Side ◽  
Charge Loss ◽  
Selective Chemical ◽  
Tcad Simulation

Abstract The single-bit charge loss of flash memory after stress has been investigated using TEM with selective chemical etching and TCAD simulation for the effect of silicon dopant profile and electrical failure analysis technique. However, the abnormal dopant profile on the drain-side of the failing bit observed in the TEM does not match the leakage behavior from the simulation. A qualitative model for the degradation process is proposed based on the electrical failure analysis results, it is suggested that the hole generated by avalanche breakdown captured by oxide traps on the drain-side during the stress is the source of leakage current.

Failure Analysis and Reliability Study of NAND Flash-Based Solid State Drives

2016 ◽  
Vol 2 (2) ◽  
pp. 315 ◽  
Author(s):  
R. Sayyad ◽  
Sangram Redkar
Keyword(s):  
Solid State ◽  
Failure Analysis ◽  
Flash Memory ◽  
Fault Tree Analysis ◽  
Physical Nature ◽  
Systematic Evaluation ◽  
Nand Flash ◽  
Solid State Drives ◽  
Nand Flash Memory ◽  
Reliability Study

<p>The research focuses on conducting failure analysis and reliability study to understand and analyze the root cause of Quality, Endurance component Reliability Demonstration Test (RDT) failures and determine SSD performance capability. It addresses essential challenges in developing techniques that utilize solid-state memory technologies (with emphasis on NAND flash memory) from device, circuit, architecture, and system perspectives. These challenges include not only the performance degradation arising from the physical nature of NAND flash memory, e.g., the inability to modify data in-place read/write performance asymmetry, and slow and constrained erase functionality, but also the reliability drawbacks that limits Solid State Drives (SSDs) performance.  In order to understand the nature of failures, a Fault Tree Analysis (FTA) was performed that identified the potential causes of component failures. In the course of this research, significant data gathering and analysis effort was carried out that led to a systematic evaluation of the components under consideration. </p>

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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