Reliability Improvement in Multi-level Cu/SiOC Low k Integration

2006 ◽  
Author(s):  
Y. W. Chen ◽  
I.C. Chen ◽  
Johnston Zou ◽  
G. Zhang ◽  
Steven Chen ◽  
...  
Keyword(s):  
Reliability Improvement ◽  
Multi Level ◽  
Low K

A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application

2001 ◽  
Vol 45 (1) ◽  
pp. 199-203 ◽  
Author(s):  
Chung-Hui Chen ◽  
Yean-Kuen Fang ◽  
Chun-Sheng Lin ◽  
Chih-Wei Yang ◽  
Jang-Cheng Hsieh
Keyword(s):  
Multi Level ◽  
Low K

scholarly journals Fault-Tolerant Operation Strategy for Reliability improvement of a Switched-Capacitor Multi-Level Inverter

2021 ◽  
pp. 1-1
Author(s):  
Mohammadjavad Hassani ◽  
Erfan Azimi ◽  
Aryorad Khodaparast ◽  
Jafar Adabi ◽  
Edris Pouresmaeil
Keyword(s):  
Fault Tolerant ◽  
Switched Capacitor ◽  
Operation Strategy ◽  
Reliability Improvement ◽  
Multi Level

Reliability Characterization of Moisture-Induced Degradation of Low-K Dielectric Behavior for Advanced Interconnects

1999 ◽  
Vol 565 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Mondon ◽  
D. Blachier ◽  
Y. Morand ◽  
G. Reimbold
Keyword(s):  
Moisture Diffusion ◽  
Diffusion Path ◽  
Moisture Stress ◽  
Sem Analysis ◽  
Dielectric Behavior ◽  
Electrical Measurements ◽  
Metal Structures ◽  
Multi Level ◽  
Low K

AbstractThis paper reports degradation characteristics of low-k dielectric (FOX) in multi-level metal structures (comb-type capacitors) submitted to moisture stress. A large increase of leakage current (>105) and capacitance (up to ×3) is observed after moisture stress when only FOX is used as lateral dielectric, while moderate degradation takes place when an oxide liner is placed between FOX and metal lines. Enhanced moisture induced degradation is found on previously probed dices with respect to virgin devices. Systematic electrical measurements, combined with SEM analysis, are performed to find out the moisture diffusion path. When contact pads are damaged by previous probing (owing to the mechanical weakness of FOX in the pad stack), they provide a direct entry path for enhanced humidity intake. Humidity is also shown to enter through wafer border. Using a SiO2 liner combined with FOX improves considerably the resistance to moisture degradation.

Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnects

2004 ◽  
Vol 75 (2) ◽  
pp. 183-193 ◽  
Author(s):  
S Balakumar ◽  
Grace Wong ◽  
Chi Fo Tsang ◽  
T Hara ◽  
W.J Yoo
Keyword(s):  
Adhesion Strength ◽  
Dielectric Film ◽  
Multi Level ◽  
Low K

Via Electromigration Lifetime Improvement of Aluminum Dual-Damascene Interconnects by Using Soft Low-k Organic SOG Interlayer Dielectrics

2000 ◽  
Vol 612 ◽  
Author(s):  
Hisashi Kaneko ◽  
Takamasa Usui ◽  
Sachiyo Ito ◽  
Masahiko Hasunuma
Keyword(s):  
Tensile Stress ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Void Nucleation ◽  
Dielectric Materials ◽  
Dual Damascene ◽  
Atom Migration ◽  
Multi Level ◽  
Damascene Interconnects ◽  
Low K

AbstractThe via electromigration(EM) reliability of aluminum(Al) dual-damascene interconnects by using Niobium(Nb) new reflow liner is described. It has been found that the via EM lifetime was improved by introducing low-k organic spin on glass(SOG)-passivated structure than the conventional TEOS-SiO2/SiN-passivated structure. Higher EM activation energy of 1.08 eV was obtained for the SOG-passivated structure than the conventional TEOS-passivated structure of 0.9 eV, even though no significant Al micro-crystal structure difference was found for both structures. It has been turned out that the low-k SOG material has the 1/7 Young's modulus (8 GPa) of TEOS-SiO2 (57 GPa) or thermal SiO2(70 GPa). The small Young's modulus means that SOG is more elastically deformable and/or softer than TEOS or thermal SiO2. This elastic deformation of the low-k SOG could retard the tensile stress evolution due to the Al atom migration near the cathode via, and elongated the time until the Al interconnect tensile stress exceeds the critical stress value for void nucleation. It has been concluded that the small-RC and reliable multi-level Al interconnect can be realized by the Nb-liner reflow-sputtered process with soft and low-k SOG dielectric materials.

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