Diffractive lenses for high resolution laser based failure analysis

2006 ◽  
Author(s):  
Frank Zachariasse ◽  
Martijn Goossens
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Diffractive Lenses

Diffractive Lenses for High Resolution Laser Based Failure Analysis

2005 ◽  
Author(s):  
Frank Zachariasse ◽  
Martijn J. Goossens
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Laser Scanning ◽  
New Method ◽  
Lateral Resolution ◽  
Back Side ◽  
Diffractive Lens ◽  
Standard Equipment ◽  
Diffractive Lenses ◽  
Better Than

Abstract In this paper we present a new method to increase the lateral resolution available in laser scanning failure analysis tools. By fabricating a diffractive lens on the back side of the die, the area of the circuit of interest, directly underneath the lens, may be studied with a lateral resolution up to 3.5 times better than without the lens. This method is easily implemented with standard equipment already present in most failure analysis laboratories, and overcomes some significant problems encountered with alternative resolution enhancing schemes.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

High-Resolution Objectives Using Diffractive Lenses

1997 ◽  
Author(s):  
Grigoriy I. Greisukh ◽  
Sergei T. Bobrov ◽  
Sergei A. Stepanov
Keyword(s):  
High Resolution ◽  
Diffractive Lenses

Nanoprobing and EBAC for Improving Failure Analysis Success Rates on Sub-14nm Logic and SRAM

2018 ◽  
Author(s):  
John Masnik ◽  
Noor Jehan Saujauddin ◽  
Kevin Davidson ◽  
Esther P.Y. Chen
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Case Studies ◽  
Electrical Measurement ◽  
Success Rates ◽  
Electron Microscopic ◽  
Microscopic Scale ◽  
Static Technique

Abstract Nanoprobing, electrical probing (DC electrical measurement of semiconductors using nanoscale probes) on an electron microscopic scale, and EBAC, a high-resolution, static technique, can be used for isolating defects and improving failure analysis success rates on both logic and SRAM devices. This paper presents three case studies of subtle defects on a technology beyond 14nm that required nanoprobing.

Non Invasive Failure Analysis of Passive Electronic Devices in Wireless Modules Using X-ray Micro Tomography (MicroCT)

2008 ◽  
Author(s):  
Tyler Pendleton ◽  
Luke Hunter ◽  
S. H. Lau
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Electronic Devices ◽  
Interesting Case ◽  
X Rays ◽  
X Ray ◽  
Case Examples ◽  
Non Invasive ◽  
Novel Approach ◽  
Micro Tomography

Abstract Conventional microCTs or 3D x-ray upgrades from existing 2D x-ray systems have two major drawbacks when they are used for failure analysis of advanced packages: Insufficient resolution to image small (1 to 5 microns) materials and the lack of imaging contrast to visualize cracks, whiskers, and defects within low Z materials. This paper discusses some of the failure analysis (FA) case studies of wireless modules using a high resolution micro x-ray CT (XCT). These examples show the value of high resolution XCT as a novel approach to some common package level defects, including some interesting case examples, where failure mechanisms have been uncovered which could not have been done, using conventional means. The non-invasive FA technique for RF modules technique has been shown to dramatically improve the FA engineers' chances of identifying defects over conventional 2D x-rays and avoid the need for physical and tedious cross sectioning of these devices.

Enhanced Failure Analysis on Open TSV Interconnects

2012 ◽  
Author(s):  
F. Altmann ◽  
C. Schmidt ◽  
J. Beyersdorfer ◽  
M. Simon-Najasek ◽  
C. Große ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Failure Analysis ◽  
Preparation Technique ◽  
Target Preparation ◽  
Material Analysis ◽  
Highly Efficient ◽  
Lock In

Abstract In this paper different methods and novel tools for failure localisation and high resolution material analysis for open TSV interconnects will be discussed. The paper shows the application of enhanced methods for the localisation of sidewall shorts in open TSV structures by adapted Photoemission Microscopy (PEM), Lock-in Thermography (LIT) and Electron Beam Absorbed Imaging (EBAC). In addition, a new highly efficient target preparation technique is presented, which allows the combination of Laser and FIB milling, in order to access TSV sidewall defects. Finally the use of this technique is demonstrated in a failure analysis case study.

High-Resolution Objectives Using Diffractive Lenses

1997 ◽  
Author(s):  
Grigoriy I. Greisukh ◽  
Sergei T. Bobrov ◽  
Sergei A. Stepanov
Keyword(s):  
High Resolution ◽  
Diffractive Lenses
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