Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

10.1109/ipfa.1999.791294 ◽

1999 ◽

Author(s):

Byung Jin Cho ◽

Sun Jung Kim ◽

C.H. Ling ◽

Moon Sig Joo ◽

In Seok Yeo

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

X Ray ◽

Radiation Induced ◽

Thin Gate Oxide

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Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE Transactions on Electron Devices ◽

10.1109/16.824744 ◽

2000 ◽

Vol 47 (3) ◽

pp. 650-652 ◽

Cited By ~ 2

Author(s):

C.H. Ling ◽

C.H. Ang ◽

D.S. Ang

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

X Ray ◽

Thin Gate Oxide

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The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

Chinese Physics ◽

10.1088/1009-1963/14/9/036 ◽

2005 ◽

Vol 14 (9) ◽

pp. 1886-1891 ◽

Cited By ~ 3

Author(s):

Wang Yan-Gang ◽

Xu Ming-Zhen ◽

Tan Chang-Hua ◽

Zhang J F. ◽

Duan Xiao-Rong

Keyword(s):

Leakage Current ◽

Conduction Mechanism ◽

Gate Oxide ◽

Constant Voltage ◽

Stress Induced Leakage Current ◽

Thin Gate Oxide

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Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7984 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7984-7992 ◽

Cited By ~ 5

Author(s):

Joan Marc Rafí ◽

Abdelkarim Mercha ◽

Eddy Simoen ◽

Kiyoteru Hayama ◽

Cor Claeys

Keyword(s):

Field Effect Transistors ◽

Drain Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Back Gate ◽

Radiation Induced ◽

Thin Gate Oxide ◽

Current Transients

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Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

Solid-State Electronics ◽

10.1016/0038-1101(93)90177-r ◽

1993 ◽

Vol 36 (9) ◽

pp. 1353-1355 ◽

Cited By ~ 6

Author(s):

A. Acovic ◽

C.C.-H. Hsu ◽

L.C. Hsia ◽

J.M. Aitken

Keyword(s):

Gate Oxide ◽

Cmos Technology ◽

X Ray ◽

Hot Carrier ◽

Thin Gate Oxide

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Stress-induced high-field gate leakage current in ultra-thin gate oxide

Solid-State Electronics ◽

10.1016/s0038-1101(00)00008-3 ◽

2000 ◽

Vol 44 (6) ◽

pp. 977-980 ◽

Cited By ~ 3

Author(s):

Jianlin Wei ◽

Lingfeng Mao ◽

Mingzhen Xu ◽

Changhua Tan ◽

Xiaorong Duan

Keyword(s):

Leakage Current ◽

High Field ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

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Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824275 ◽

2003 ◽

Author(s):

H.S. Momose ◽

T. Ohguro ◽

E. Morifuji ◽

H. Sugaya ◽

S. Nakamura ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Electrode ◽

Direct Tunneling ◽

Thin Gate Oxide

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Research on the Gate Leakage Current of PMOSFET with Ultra-thin Gate Oxide

Journal of Convergence Information Technology ◽

10.4156/jcit.vol7.issue11.6 ◽

2012 ◽

Vol 7 (11) ◽

pp. 44-51

Author(s):

Shigang HU ◽

Xiaofeng WU ◽

Zaifang XI

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

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GATE LEAKAGE CURRENT NOISE IN ULTRA-THIN GATE OXIDE MOSFET'S

Noise in Physical Systems and 1/F Fluctuations ◽

10.1142/9789812811165_0037 ◽

2001 ◽

Cited By ~ 2

Author(s):

J. H. LEE ◽

G. BOSMAN ◽

K. R. GREEN ◽

D. LADWIG

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Current Noise ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

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Leakage Current Due To Plasma Induced Damage In Thin Gate Oxide MOS Transistors

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596675 ◽

1997 ◽

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Mos Transistors ◽

Thin Gate Oxide

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Stress induced gate–drain leakage current in ultra-thin gate oxide

Microelectronics Reliability ◽

10.1016/j.microrel.2006.10.013 ◽

2007 ◽

Vol 47 (12) ◽

pp. 2070-2081 ◽

Cited By ~ 2

Author(s):

C. Petit ◽

D. Zander

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Thin Gate Oxide

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