High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors

Author(s):  
Sulochana Dhar ◽  
Nan M. Jokerst
1991 ◽  
Vol 224 ◽  
Author(s):  
Hiroshi Hayama ◽  
Masahito Mukainari ◽  
Takeshi Saito

AbstractA new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.


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pp. 1441-1447 ◽  
Author(s):  
Julian S. Cashmore ◽  
Marco Apolloni ◽  
Antonio Braga ◽  
Onur Caglar ◽  
Valentina Cervetto ◽  
...  

Author(s):  
U. Kroll ◽  
J. Meier ◽  
S. Benagli ◽  
D. Borello ◽  
J. Steinhauser ◽  
...  

2011 ◽  
Vol 8 (10) ◽  
pp. 2978-2981 ◽  
Author(s):  
Stefan Klein ◽  
Stephan Wieder ◽  
Susanne Buschbaum ◽  
Martin Rohde ◽  
Konrad Schwanitz ◽  
...  

2009 ◽  
Vol 517 (23) ◽  
pp. 6218-6224 ◽  
Author(s):  
A.A. Howling ◽  
B. Strahm ◽  
Ch Hollenstein

2015 ◽  
Vol 143 ◽  
pp. 375-385 ◽  
Author(s):  
P.A. Losio ◽  
O. Caglar ◽  
J.S. Cashmore ◽  
J.E. Hötzel ◽  
S. Ristau ◽  
...  

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