A New Recrystallization Technique for Large Area Thin Film Silicon on Glass Structure
Keyword(s):
AbstractA new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.
Keyword(s):
2015 ◽
Vol 23
(11)
◽
pp. 1441-1447
◽
2011 ◽
Vol 8
(10)
◽
pp. 2978-2981
◽
2015 ◽
Vol 62
(11)
◽
pp. 3524-3529
◽
Keyword(s):
Keyword(s):
Keyword(s):