Recent results on long-wavelength VCSELs: Device structures, performance and applications

Author(s):  
T. Gruendl ◽  
M. Mueller ◽  
C. Grasse ◽  
K. Vizbaras ◽  
M.-C. Amann
1996 ◽  
Vol 421 ◽  
Author(s):  
S.N.G. Chu ◽  
S. Nakahara

AbstractWe summarize the characteristic defect structures associated with gradual-degradation, rapiddegradation, catastrophic (mirror-facet) optical damage (COD), electric static discharge (ESD) and electric overstress (EOS) damages to provide a defect-map for device failure mode analysis. The generation mechanisms of these lattice defects are discussed which pinpoint the weak links in the device structures.


1979 ◽  
Vol 44 ◽  
pp. 307-313
Author(s):  
D.S. Spicer

A possible relationship between the hot prominence transition sheath, increased internal turbulent and/or helical motion prior to prominence eruption and the prominence eruption (“disparition brusque”) is discussed. The associated darkening of the filament or brightening of the prominence is interpreted as a change in the prominence’s internal pressure gradient which, if of the correct sign, can lead to short wavelength turbulent convection within the prominence. Associated with such a pressure gradient change may be the alteration of the current density gradient within the prominence. Such a change in the current density gradient may also be due to the relative motion of the neighbouring plages thereby increasing the magnetic shear within the prominence, i.e., steepening the current density gradient. Depending on the magnitude of the current density gradient, i.e., magnetic shear, disruption of the prominence can occur by either a long wavelength ideal MHD helical (“kink”) convective instability and/or a long wavelength resistive helical (“kink”) convective instability (tearing mode). The long wavelength ideal MHD helical instability will lead to helical rotation and thus unwinding due to diamagnetic effects and plasma ejections due to convection. The long wavelength resistive helical instability will lead to both unwinding and plasma ejections, but also to accelerated plasma flow, long wavelength magnetic field filamentation, accelerated particles and long wavelength heating internal to the prominence.


Author(s):  
A. K. Rai ◽  
P. P. Pronko

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.


Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions


Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  

1991 ◽  
Vol 161 (11) ◽  
pp. 95 ◽  
Author(s):  
A.I. Frank
Keyword(s):  

GIS Business ◽  
2020 ◽  
Vol 15 (1) ◽  
pp. 383-394
Author(s):  
K. Shalini ◽  
K.Rajasekhar

In this paper, the effect of Slip and Hall effects on the flow of Hyperbolic tangent fluid through a porous medium in a planar channel with peristalsis under the assumption of long wavelength is investigated. A Closed form solutions are obtained for axial velocity and pressure gradient by employing perturbation technique. The effects of various emerging parameters on the pressure gradient, time averaged volume flow rate and frictional force are discussed with the aid of graphs.


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