The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications

2011 ◽  
Author(s):  
Hyejung Choi ◽  
Jaeyun Yi ◽  
Sangmin Hwang ◽  
Sangkeum Lee ◽  
Seokpyo Song ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Tunnel Barrier ◽  
Switching Device ◽  
Memory Applications

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications

scholarly journals Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105030 ◽  
Author(s):  
Chengyue Xiong ◽  
Ziyao Lu ◽  
Siqi Yin ◽  
Hongming Mou ◽  
Xiaozhong Zhang
Keyword(s):  
Magnetic Field ◽  
Resistive Switching ◽  
Switching Device ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

High-κ Al2O3/WOxBilayer Dielectrics for Low-Power Resistive Switching Memory Applications

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PH01 ◽  
Author(s):  
Writam Banerjee ◽  
Sheikh Ziaur Rahaman ◽  
Amit Prakash ◽  
Siddheswar Maikap
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

High-$\kappa$ Al$_{2}$O$_{3}$/WO$_{x}$ Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications

2011 ◽  
Vol 50 (10) ◽  
pp. 10PH01 ◽  
Author(s):  
Writam Banerjee ◽  
Sheikh Ziaur Rahaman ◽  
Amit Prakash ◽  
Siddheswar Maikap
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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