Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

2014 ◽  
Vol 115 (1) ◽  
pp. 014501 ◽  
Author(s):  
Somnath Mondal ◽  
Ching-Hao Chueh ◽  
Tung-Ming Pan
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Resistive Switching ◽  
Current Conduction ◽  
Switching Characteristics ◽  
Memory Applications

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 189-191 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Ching Chen ◽  
Hung-Ping Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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