Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress
Keyword(s):
2010 ◽
Vol 2010
(0)
◽
pp. 311-313
2009 ◽
Vol 32
(4)
◽
pp. 720-728
◽
2018 ◽
Vol 7
(11)
◽
pp. P689-P692
◽
Keyword(s):
Keyword(s):