Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

Author(s):  
C.-C. Hsieh ◽  
T.-C. Chiu
2010 ◽  
Vol 2010 (0) ◽  
pp. 311-313
Author(s):  
Tatsuhiro HORI ◽  
Takahiro KINOSHITA ◽  
Takashi KAWAKAMI

2009 ◽  
Vol 32 (4) ◽  
pp. 720-728 ◽  
Author(s):  
C.S. Selvanayagam ◽  
J.H. Lau ◽  
Xiaowu Zhang ◽  
S. Seah ◽  
K. Vaidyanathan ◽  
...  

2018 ◽  
Vol 7 (11) ◽  
pp. P689-P692 ◽  
Author(s):  
Van Quy Dinh ◽  
Kazuo Kondo ◽  
Van Ha Hoang ◽  
Tetsuji Hirato

1980 ◽  
Vol 57 (2) ◽  
pp. 683-690 ◽  
Author(s):  
C. T. Hsing ◽  
D. Kennedy ◽  
K. M. Van Vliet ◽  
A. D. Sutherland

2020 ◽  
Vol 59 (SL) ◽  
pp. SLLH01
Author(s):  
Wei Feng ◽  
Naoya Watanabe ◽  
Haruo Shimamoto ◽  
Masahiro Aoyagi ◽  
Katsuya Kikuchi

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