Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

2003 ◽  
Author(s):  
Y. Suda ◽  
H. Kawasaki ◽  
K. Doi ◽  
J. Namba ◽  
T. Nakazono ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Nd:Yag Laser ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Laser Deposition ◽  
Pulsed Nd:Yag Laser

Effects of Ion Beam Energy on the Formation of Cubic Boron Nitride Thin Films by Pulsed Nd:YAG Laser Deposition

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4525-4527 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Kazuya Doi ◽  
Satoshi Hiraishi ◽  
Yoshiaki Suda
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Nd:Yag Laser ◽  
Beam Energy ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Laser Deposition ◽  
Pulsed Nd:Yag Laser

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Electron Microscopy Study of Cubic Boron Nitride Thin Films Grown by Ion -Assisted Pulsed Laser Deposition

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Laser Deposition ◽  
Electron Microscopic ◽  
High Fraction

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.

Microstructure of cubic boron nitride thin films grown by ion‐assisted pulsed laser deposition

1994 ◽  
Vol 76 (1) ◽  
pp. 295-303 ◽  
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
P. Rez ◽  
M. J. Mills ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition

Formation and Properties of Carbon Nitride Thin Films by Pulsed Nd:YAG Laser Deposition

2001 ◽  
Vol 40 (Part 1, No. 2B) ◽  
pp. 1061-1063 ◽  
Author(s):  
Yoshiaki Suda ◽  
Kazuya Doi ◽  
Jun Namba ◽  
Fumiaki Imura ◽  
Hiroharu Kawasaki
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Carbon Nitride ◽  
Laser Deposition ◽  
Pulsed Nd:Yag Laser

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ion Beam ◽  
Cubic Boron Nitride

Tantalum Nitride Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition Method

2000 ◽  
Vol 617 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Kazuya Doi. Jun Namba ◽  
Yoshiaki Suda
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Tantalum Nitride ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Pulsed Nd:Yag Laser ◽  
Diffraction Patterns

AbstractTantalum nitride (TAN) films have been deposited on silicon substrates by using a pulsed Nd:YAG laser deposition method. Experimental results suggest that the substrate temperature is one of the most important parameters to prepare crystalline tantalum nitride thin films. Glancing-angle X-ray diffraction patterns show that the films deposited at Ts ≤ 300 °C are almost amorphous. and crystalline Ta6N2.57 films are obtained at Ts ≥ 500 °C. Grain size of the film increases with increasing substrate temperature.

Preparation Of Crystalline Chromium Carbide Thin Films Synthesized By Pulsed Nd:YAG Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
Kazuya Doi ◽  
Satoshi Hiraishi ◽  
Hiroharu Kawasaki ◽  
Yoshiaki Suda
Keyword(s):  
Thin Films ◽  
Chromium Carbide ◽  
Nd:Yag Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
Pulsed Nd:Yag Laser ◽  
Methane Gas ◽  
Diffraction Patterns

AbstractChromium carbide thin films are synthesized on Si(100) substrates by a pulsed Nd:YAG laser deposition (PLD) method as parameters of methane gas pressure. Glancing-angle X-ray diffraction patterns show that the film prepared by PLD method is a polycrystalline thin film composed of Cr3C2and Cr7C3, even in the base pressure. Diffraction patterns, however, are depended on the methane gas pressure. Grain size of the prepared film increases with increasing methane gas pressure. One of the reasons of these phenomena may be considered to the phase reaction between the ablated species, such as Cr, CrCx and CH4gas in the plasma plume.

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