Evaluation of different wafer charging metrology protocols for thin dielectrics

2003 ◽  
Author(s):  
Ziwei Fang ◽  
S. Felch ◽  
J. Weeman ◽  
S. Mehta
Keyword(s):  
Thin Dielectrics ◽  
Wafer Charging

The precision implant 9500 plasma flood system — the advanced solution to wafer charging

1995 ◽  
Vol 96 (1-2) ◽  
pp. 30-33 ◽  
Author(s):  
H. Ito ◽  
T. Kamata ◽  
J. England ◽  
I. Fotheringham ◽  
F. Plumb ◽  
...  
Keyword(s):  
Wafer Charging

Rapid formation of ultra-thin dielectrics by Si surface modification using a large area low energy electron beam

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 796-799 ◽  
Author(s):  
Y.C Du ◽  
H Wang ◽  
B.Z Li ◽  
D.C Sun ◽  
Z.Q Yu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Low Energy ◽  
Energy Electron ◽  
Large Area ◽  
Rapid Formation ◽  
Low Energy Electron ◽  
Thin Dielectrics

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment

1994 ◽  
Vol 342 ◽  
Author(s):  
H. Barry Harrison ◽  
Andrew Misiura ◽  
Sima Dimitrijev ◽  
Denis Sweatman ◽  
Z. Yao ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Nitric Oxides ◽  
Nitrous Oxides ◽  
20 Nm ◽  
Thin Dielectrics ◽  
Thermally Grown

ABSTRACTIn this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.

A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

1990 ◽  
Author(s):  
Hirotaka MUTO ◽  
Haruhisa FUJII ◽  
Koichiro NAKANISHI ◽  
Shingo IKEDA
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Wafer Charging
Sign in / Sign up

Export Citation Format

Share Document