Epi-replacement in CMOS technology by high dose, high energy boron implantation into Cz substrates

2003 ◽  
Author(s):  
K.K. Bourdelle ◽  
Y. Chen ◽  
R.A. Ashton ◽  
L.M. Rubin ◽  
A. Agarwal ◽  
...  
Keyword(s):  
Cmos Technology ◽  
High Energy ◽  
High Dose ◽  
Boron Implantation

Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology

2001 ◽  
Vol 48 (9) ◽  
pp. 2043-2049 ◽  
Author(s):  
K.K. Bourdelle ◽  
Yuanning Chen ◽  
R.A. Ashton ◽  
L.M. Rubin ◽  
A. Agarwal ◽  
...  
Keyword(s):  
Cmos Technology ◽  
High Energy ◽  
High Dose ◽  
Boron Implantation

High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

1991 ◽  
Author(s):  
Bruha Raicu ◽  
W. A. Keenan ◽  
Michael I. Current ◽  
David Mordo ◽  
Roger Brennan
Keyword(s):  
High Dose ◽  
Shallow Junction ◽  
Boron Implantation ◽  
Polysilicon Films

scholarly journals A –5 dBm 400MHz OOK Transmitter for Wireless Medical Application

2014 ◽  
Vol 60 (2) ◽  
pp. 193-198
Author(s):  
M. Yousefi ◽  
D. Koozehkanani ◽  
H. Jangi ◽  
N. Nasirzadeh ◽  
J. Sobhi
Keyword(s):  
Energy Consumption ◽  
Power Amplifier ◽  
High Efficiency ◽  
Medical Application ◽  
Cmos Technology ◽  
High Energy ◽  
Data Rate ◽  
High Data Rate ◽  
Low Power Consumption ◽  
High Data

Abstract A 400 MHz high efficiency transmitter for wireless medical application is presented in this paper. Transmitter architecture with high-energy efficiencies is proposed to achieve high data rate with low power consumption. In the on-off keying transmitters, the oscillator and power amplifier are turned off when the transmitter sends 0 data. The proposed class-e power amplifier has high efficiency for low level output power. The proposed on-off keying transmitter consumes 1.52 mw at -5 dBm output by 40 Mbps data rate and energy consumption 38 pJ/bit. The proposed transmitter has been designed in 0.18μm CMOS technology.

The role of the substrate in the high energy boron implantation damage recovering

2009 ◽  
Vol 159-160 ◽  
pp. 168-172
Author(s):  
I. Mica ◽  
L. Di Piazza ◽  
L. Laurin ◽  
M. Mariani ◽  
A.G. Mauri ◽  
...  
Keyword(s):  
High Energy ◽  
Implantation Damage ◽  
Boron Implantation

scholarly journals The Impact of Microelectronics on High Energy Physics Innovation: The Role of 65 nm CMOS Technology on New Generation Particle Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
N. Demaria
Keyword(s):  
Particle Physics ◽  
High Energy Physics ◽  
Hadron Collider ◽  
Cmos Technology ◽  
High Energy ◽  
Main Role ◽  
Noise Power ◽  
Recent Developments ◽  
The Impact ◽  
Energy Physics

The High Luminosity Large Hadron Collider (HL-LHC) at CERN will constitute a new frontier for the particle physics after the year 2027. Experiments will undertake a major upgrade in order to stand this challenge: the use of innovative sensors and electronics will have a main role in this. This paper describes the recent developments in 65 nm CMOS technology for readout ASIC chips in future High Energy Physics (HEP) experiments. These allow unprecedented performance in terms of speed, noise, power consumption and granularity of the tracking detectors.

scholarly journals Back to the Future: Very High-Energy Electrons (VHEEs) and Their Potential Application in Radiation Therapy

Cancers ◽  
2021 ◽  
Vol 13 (19) ◽  
pp. 4942
Author(s):  
Maria Grazia Ronga ◽  
Marco Cavallone ◽  
Annalisa Patriarca ◽  
Amelia Maia Leite ◽  
Pierre Loap ◽  
...  
Keyword(s):  
Radiation Therapy ◽  
Current Knowledge ◽  
High Energy ◽  
High Dose Rate ◽  
Point Of View ◽  
High Dose ◽  
Dose Rates ◽  
High Energy Electrons ◽  
Very High Energy ◽  
Very High

The development of innovative approaches that would reduce the sensitivity of healthy tissues to irradiation while maintaining the efficacy of the treatment on the tumor is of crucial importance for the progress of the efficacy of radiotherapy. Recent methodological developments and innovations, such as scanned beams, ultra-high dose rates, and very high-energy electrons, which may be simultaneously available on new accelerators, would allow for possible radiobiological advantages of very short pulses of ultra-high dose rate (FLASH) therapy for radiation therapy to be considered. In particular, very high-energy electron (VHEE) radiotherapy, in the energy range of 100 to 250 MeV, first proposed in the 2000s, would be particularly interesting both from a ballistic and biological point of view for the establishment of this new type of irradiation technique. In this review, we examine and summarize the current knowledge on VHEE radiotherapy and provide a synthesis of the studies that have been published on various experimental and simulation works. We will also consider the potential for VHEE therapy to be translated into clinical contexts.

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L417-L420 ◽  
Author(s):  
Masao Tamura ◽  
Shoji Shukuri ◽  
Tohru Ishitani ◽  
Masakazu Ichikawa ◽  
Takahisa Doi
Keyword(s):  
Dose Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Dose Rate ◽  
Rate Effect ◽  
High Dose ◽  
Boron Implantation ◽  
Dose Rate Effect

scholarly journals Toward an effective use of laser-driven very high energy electrons for radiotherapy: Feasibility assessment of multi-field and intensity modulation irradiation schemes

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Luca Labate ◽  
Daniele Palla ◽  
Daniele Panetta ◽  
Federico Avella ◽  
Federica Baffigi ◽  
...  
Keyword(s):  
High Energy ◽  
High Dose Rate ◽  
High Dose ◽  
Feasibility Assessment ◽  
High Energy Electrons ◽  
Very High Energy ◽  
Effective Use ◽  
Dose Deposition ◽  
Therapeutic Doses ◽  
Very High

Abstract Radiotherapy with very high energy electrons has been investigated for a couple of decades as an effective approach to improve dose distribution compared to conventional photon-based radiotherapy, with the recent intriguing potential of high dose-rate irradiation. Its practical application to treatment has been hindered by the lack of hospital-scale accelerators. High-gradient laser-plasma accelerators (LPA) have been proposed as a possible platform, but no experiments so far have explored the feasibility of a clinical use of this concept. We show the results of an experimental study aimed at assessing dose deposition for deep seated tumours using advanced irradiation schemes with an existing LPA source. Measurements show control of localized dose deposition and modulation, suitable to target a volume at depths in the range from 5 to 10 cm with mm resolution. The dose delivered to the target was up to 1.6 Gy, delivered with few hundreds of shots, limited by secondary components of the LPA accelerator. Measurements suggest that therapeutic doses within localized volumes can already be obtained with existing LPA technology, calling for dedicated pre-clinical studies.

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