High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

1991 ◽  
Author(s):  
Bruha Raicu ◽  
W. A. Keenan ◽  
Michael I. Current ◽  
David Mordo ◽  
Roger Brennan
Keyword(s):  
High Dose ◽  
Shallow Junction ◽  
Boron Implantation ◽  
Polysilicon Films

High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L417-L420 ◽  
Author(s):  
Masao Tamura ◽  
Shoji Shukuri ◽  
Tohru Ishitani ◽  
Masakazu Ichikawa ◽  
Takahisa Doi
Keyword(s):  
Dose Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Dose Rate ◽  
Rate Effect ◽  
High Dose ◽  
Boron Implantation ◽  
Dose Rate Effect

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Mechanical and Microstructural Properties of Boron Implanted Beryllium

1981 ◽  
Vol 7 ◽  
Author(s):  
R. A. Kant ◽  
A. R. Knudson ◽  
K. Kumar
Keyword(s):  
Wear Resistance ◽  
Friction And Wear ◽  
Depth Distribution ◽  
Pattern Analysis ◽  
Wear Behavior ◽  
High Dose ◽  
Microstructural Properties ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Mechanical And Microstructural Properties

ABSTRACTHigh dose boron implantation into instrument grade 1–400 beryllium has been found to produce a substantial increase of its wear resistance. A comparison of the friction and wear behavior resulting from two shapes of the boron depth distribution is made. The wear resistance provided by a boron layer of constant (flat) concentration was found to be superior to that of a gradually decreasing (graded) profile. Rutherford backscattering was used to determine the boron depth distribution profiles and transmission electron microscopy was used to examine the microstructure. Electron diffraction pattern analysis provides evidence for the formation of beryllium borides.

Modeling of Damage Enhanced Diffusion of Implanted Boron in Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
V. C. Lo ◽  
S. P. Wong ◽  
Y. W. Lam
Keyword(s):  
High Dose ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Boron Implantation ◽  
Dominant Point ◽  
Local Relaxation ◽  
And Diffusion ◽  
Defect Species

AbstractModeling of the damage enhanced diffusion (DED) behaviors of implanted boron in silicon of Powell’s experiment [1] has been performed. In his experiment, Powell showed that the diffusion of implanted boron in silicon was dependent on implantation dosage as well as on the annealing conditions. For low dose boron implantation, the extent of boron diffusion after 15 second RTP is less than that of furnace annealing at 900°C for 30 minutes. But the reverse is true for the high dose case, and a two-step annealing leads to least and minimal diffusion. In this work, implantation induced excess self-interstitials which generate mobile boron atoms at the intersititial sites are considered the dominant point defect species responsible for the DED. Both the local relaxation and diffusion of these excess self-interstitials are considered. The features of the DED reported by Powell are successfully reproduced and explained.

Effect of boron implantation on the structure and residual stress of LPCVD polysilicon films

1992 ◽  
Vol 2 (3) ◽  
pp. 170-172 ◽  
Author(s):  
O Ruiz ◽  
S Marco ◽  
J Samitier ◽  
J R Morante ◽  
J Bausells
Keyword(s):  
Residual Stress ◽  
Boron Implantation ◽  
Polysilicon Films
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