On the degradation of field-plate assisted RESURF power devices

2012 ◽  
Author(s):  
B. K. Boksteen ◽  
S. Dhar ◽  
A. Ferrara ◽  
A. Heringa ◽  
R. J. E. Hueting ◽  
...  
Keyword(s):  
Power Devices ◽  
Field Plate

Three-Dimensional Varying Density Field Plate for Lateral Power Devices

2019 ◽  
Vol 66 (3) ◽  
pp. 1422-1429 ◽  
Author(s):  
Chunwei Zhang ◽  
Yang Li ◽  
Wenjing Yue ◽  
Zhiming Li ◽  
Xiaoqian Fu ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Density Field ◽  
Power Devices ◽  
Field Plate

scholarly journals T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

2021 ◽  
Author(s):  
Rajan Singh ◽  
Trupti Lenka ◽  
Hieu Nguyen
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Power Devices ◽  
Field Plate ◽  
Maximum Value ◽  
Dimensional Electron Gas ◽  
State Breakdown ◽  
Rf Performance

In this paper, we report record DC and RF performance in β-Ga<sub>2</sub>O<sub>3</sub> High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length L<sub>HL</sub> of 180 nm and foot-length L<sub>FL</sub> of 120 nm is used in the highly scaled device with an aspect ratio (L<sub>G</sub>/t<sub>barrier</sub>) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 10<sup>13</sup> cm<sup>-2</sup>, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current I<sub>D,MAX</sub> of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance L<sub>SD</sub> of 1.9 µm exhibits record low specific-on resistance R<sub>ON,sp</sub> of 0.136 mΩ-cm<sup>–2</sup>, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm<sup>2</sup>. Additionally, current gain cut-off frequency f<sub>T</sub> and maximum oscillation frequency f<sub>MAX</sub> of 48 and 142 GHz are estimated. The obtained results show the potential of Ga<sub>2</sub>O<sub>3</sub> HEMT for futuristic power devices.

A novel metal field plate edge termination for power devices

2001 ◽  
Vol 32 (4) ◽  
pp. 323-326 ◽  
Author(s):  
J.V. Subhas Chandra Bose ◽  
M.M. De Souza ◽  
E.M. Sankara Narayanan ◽  
G. Ensell ◽  
T.J. Pease ◽  
...  
Keyword(s):  
Power Devices ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination

scholarly journals T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

2021 ◽  
Author(s):  
Rajan Singh ◽  
Trupti Lenka ◽  
Hieu Nguyen
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Power Devices ◽  
Field Plate ◽  
Maximum Value ◽  
Dimensional Electron Gas ◽  
State Breakdown ◽  
Rf Performance

In this paper, we report record DC and RF performance in β-Ga<sub>2</sub>O<sub>3</sub> High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length L<sub>HL</sub> of 180 nm and foot-length L<sub>FL</sub> of 120 nm is used in the highly scaled device with an aspect ratio (L<sub>G</sub>/t<sub>barrier</sub>) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 10<sup>13</sup> cm<sup>-2</sup>, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current I<sub>D,MAX</sub> of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance L<sub>SD</sub> of 1.9 µm exhibits record low specific-on resistance R<sub>ON,sp</sub> of 0.136 mΩ-cm<sup>–2</sup>, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm<sup>2</sup>. Additionally, current gain cut-off frequency f<sub>T</sub> and maximum oscillation frequency f<sub>MAX</sub> of 48 and 142 GHz are estimated. The obtained results show the potential of Ga<sub>2</sub>O<sub>3</sub> HEMT for futuristic power devices.

Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region

2020 ◽  
Vol 67 (5) ◽  
pp. 2218-2222
Author(s):  
Chunwei Zhang ◽  
Haijun Guo ◽  
Zhenxiang Chen ◽  
Wenjing Yue ◽  
Yang Li ◽  
...  
Keyword(s):  
Drift Region ◽  
Charge Balance ◽  
Power Devices ◽  
Field Plate ◽  
Plate Technique
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