scholarly journals High-frequency performance of graphene field effect transistors with saturating IV-characteristics

2011 ◽  
Author(s):  
Inanc Meric ◽  
Cory R. Dean ◽  
Shu-Jen Han ◽  
Lei Wang ◽  
Keith A. Jenkins ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Frequency Performance

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

scholarly journals High-frequency performance of scaled carbon nanotube array field-effect transistors

2012 ◽  
Vol 101 (5) ◽  
pp. 053123 ◽  
Author(s):  
Mathias Steiner ◽  
Michael Engel ◽  
Yu-Ming Lin ◽  
Yanqing Wu ◽  
Keith Jenkins ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanotube Array ◽  
Carbon Nanotube Array ◽  
High Frequency Performance

scholarly journals Improving the RF Performance of Carbon Nanotube Field Effect Transistor

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
S. Hamieh
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Parasitic Capacitance ◽  
Transistor Channel ◽  
Performance Limit ◽  
Rf Performance ◽  
High Frequency Performance

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.

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