The study for the mechanism on the noble thermoelectric properties of the amorphous Si-Ge-Au thin films

2003 ◽  
Author(s):  
Sang Min Lee ◽  
Y. Okamoto ◽  
T. Kawahara ◽  
J. Morimoto
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Amorphous Si ◽  
Au Thin Films

scholarly journals Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

2004 ◽  
Vol 124 (4) ◽  
pp. 307-311 ◽  
Author(s):  
Akiko Miyata ◽  
Makoto Abe ◽  
Yoichi Okamoto ◽  
Toshio Kawahara ◽  
Jun Morimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Au Thin Films

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

2017 ◽  
Vol 47 (6) ◽  
pp. 3267-3272 ◽  
Author(s):  
Shunsuke Nishino ◽  
Satoshi Ekino ◽  
Manabu Inukai ◽  
Muthusamy Omprakash ◽  
Masahiro Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Au Thin Films ◽  
Beam Deposition

The Role of Au in the Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

2010 ◽  
Vol 39 (9) ◽  
pp. 1627-1633 ◽  
Author(s):  
H. Takiguchi ◽  
Z. Yoshikawa ◽  
H. Miyazaki ◽  
Y. Okamoto ◽  
J. Morimoto
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Au Thin Films

The observation of nano-voids in Au thin films

1987 ◽  
Vol 45 ◽  
pp. 366-367
Author(s):  
William Krakow
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Present Author ◽  
Stacking Faults ◽  
Damage Threshold ◽  
Ionic Species ◽  
Rare Gases ◽  
Chain Defects ◽  
Vacancy Chains ◽  
Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

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