Effects of substrate temperature on thermoelectric properties of amorphous Si/Ge thin films

Author(s):  
Sang Min Lee ◽  
Y. Okamoto ◽  
T. Kawahara ◽  
J. Morimoto
2015 ◽  
Vol 15 (10) ◽  
pp. 8299-8304 ◽  
Author(s):  
Sung-Jae Joo ◽  
Bong Seo Kim ◽  
Bok-Ki Min ◽  
Min Wook Oh ◽  
Ji-Eun Lee ◽  
...  

Bi2Te3 thermoelectric thin films were deposited on the flexible polyimide substrates by RF magnetron co-sputtering of a Bi and a Te targets. The influence of the substrate temperature and RF power on the microstructure, chemical composition, and the thermoelectric properties of the sputtered films was investigated by using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, and in-plane resistivity/Seebeck coefficient measurement. It was shown that the thermoelectric properties of the films depend sensitively on the Bi/Te chemical composition ratio and the substrate temperature, and the layered structure was clearly observed from the cross section of the (00L)-oriented, nearly stoichiometric Bi2Te3 films when the substrate temperature is higher than 250 °C. As-deposited Bi2Te3 films deposited at 300 °C show the highest power factor of 0.97 mW/K2m and the Seebeck coefficient of −193 μV/K at 32 °C, which also have (00L) preferred orientation and the layered structure. The durability of the Bi2Te3 films on polyimide against repeated bending was also tested by monitoring the film resistance, and it was concluded that the Bi2Te3 films are applicable reliably on the curved surfaces with the radius of curvature larger than 5 mm.


2015 ◽  
Vol 49 (3) ◽  
pp. 371-376 ◽  
Author(s):  
Yelsani Vijayakumar ◽  
Katta Narasimha Reddy ◽  
Annasaheb Vitthal Moholkar

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Cheng-Fu Yang ◽  
Wei Chen

The antimony-telluride (Sb2Te3) thermoelectric thin films were prepared on SiO2/Si substrates by thermal evaporation method. The substrate temperature that ranged from room temperature to 150°C was adopted to deposit the Sb2Te3thin films. The effects of substrate temperature on the microstructures and thermoelectric properties of the Sb2Te3thin films were investigated. The crystal structure and surface morphology of the Sb2Te3thin films were characterized by X-ray diffraction analyses and field emission scanning electron microscope observation. The RT-deposited Sb2Te3thin films showed the amorphous phase. Te and Sb2Te3phases were coexisted in the Sb2Te3-based thin films as the substrate temperature was higher than room temperature. The average grain sizes of the Sb2Te3-based thin films were 39 nm, 45 nm, 62 nm, 84 nm, and 108 nm, as the substrate temperatures were 50°C, 75°C, 100°C, 125°C, and 150°C, respectively. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature; we had found that they were critically dependent on the substrate temperature.


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