Characterization of single event transient effects fabricated in triple well CMOS process

2016 ◽  
Author(s):  
Zhun Zhang ◽  
Wei He ◽  
Sheng Luo ◽  
Lingxiang He ◽  
Jia Wang ◽  
...  
Keyword(s):  
Cmos Process ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient

3D numerical simulations of single-event transient effects in SOI FinFETs

2018 ◽  
Vol 17 (4) ◽  
pp. 1608-1614 ◽  
Author(s):  
Zhenyu Wu ◽  
Benneng Zhu ◽  
Tengyue Yi ◽  
Chao Li ◽  
Yi Liu ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient

scholarly journals The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Symmetry ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 154 ◽  
Author(s):  
Jizuo Zhang ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
Shouping Li ◽  
Liang Fang
Keyword(s):  
Integrated Circuit ◽  
Semiconductor Device ◽  
Transient State ◽  
Heavy Ion ◽  
Sensitive Volume ◽  
Substrate Noise ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient ◽  
Cosmic Particle

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.

Single-event transient (SET) characterization of an LM119 voltage comparator: an approach to SET model validation using a pulsed laser

2002 ◽  
Vol 49 (3) ◽  
pp. 1502-1508 ◽  
Author(s):  
S. Buchner ◽  
D. McMorrow ◽  
A. Sternberg ◽  
L. Massengill ◽  
R.L. Pease ◽  
...  
Keyword(s):  
Model Validation ◽  
Pulsed Laser ◽  
Single Event ◽  
Single Event Transient ◽  
Voltage Comparator

scholarly journals On-Chip Characterization of Single-Event Transient Pulsewidths

2006 ◽  
Vol 6 (4) ◽  
pp. 542-549 ◽  
Author(s):  
Balaji Narasimham ◽  
Vishwa Ramachandran ◽  
Bharat L. Bhuva ◽  
Ronald D. Schrimpf ◽  
Arthur F. Witulski ◽  
...  
Keyword(s):  
Single Event ◽  
Single Event Transient ◽  
On Chip
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