CMOS shallow trench isolation x-stress effect on channel width for 130nm technology

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306306 ◽

2006 ◽

Cited By ~ 1

Author(s):

Philip Yew Tan ◽

Albert Kordesch ◽

Othman Sidek

Keyword(s):

Channel Width ◽

Stress Effect ◽

Shallow Trench Isolation ◽

Trench Isolation

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CMOS shallow trench isolation x-stress effect on channel width for 0.18μm technology

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1435016 ◽

2005 ◽

Cited By ~ 2

Author(s):

P.B.Y. Tan ◽

A.V. Kordesch ◽

O. Sidek

Keyword(s):

Channel Width ◽

Stress Effect ◽

Shallow Trench Isolation ◽

Trench Isolation

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Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

Microelectronics Reliability ◽

10.1016/j.microrel.2019.113424 ◽

2019 ◽

Vol 100-101 ◽

pp. 113424 ◽

Cited By ~ 1

Author(s):

Hyeokjin Kim ◽

Giyoun Roh ◽

Young-Kyu Kwon ◽

Bongkoo Kang

Keyword(s):

Mechanical Stress ◽

Channel Length ◽

Stress Effect ◽

Strained Si ◽

Shallow Trench Isolation ◽

Length Dependence ◽

Trench Isolation

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Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2012.06.067 ◽

2012 ◽

Vol 52 (9-10) ◽

pp. 1949-1952 ◽

Cited By ~ 3

Author(s):

Seonhaeng Lee ◽

Dongwoo Kim ◽

Cheolgyu Kim ◽

Chiho Lee ◽

Jeongsoo Park ◽

...

Keyword(s):

Mechanical Stress ◽

Channel Width ◽

Device Performance ◽

Shallow Trench Isolation ◽

Stress Effects ◽

Trench Isolation

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Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners

Electronics Letters ◽

10.1049/el:20000666 ◽

2000 ◽

Vol 36 (10) ◽

pp. 910 ◽

Cited By ~ 1

Author(s):

K. Shiozawa ◽

T. Oishi ◽

Y. Abe ◽

Y. Tokuda

Keyword(s):

Channel Width ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Effective Channel

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Shallow Trench Isolation Stress Effect on 45 Degree Rotated MOSFET Layout

2018 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/smelec.2018.8481213 ◽

2018 ◽

Author(s):

Chiew Ching Tan ◽

Philip Beow Yew Tan ◽

M.K. Md Arshad

Keyword(s):

Stress Effect ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Trench Isolation

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Shallow Trench Isolation stress effect on CMOS transistors with different channel orientations

2016 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/smelec.2016.7573633 ◽

2016 ◽

Cited By ~ 2

Author(s):

Chiew Ching Tan ◽

Philip Beow Yew Tan

Keyword(s):

Stress Effect ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Cmos Transistors ◽

Trench Isolation

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Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on nMOSFETs

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2089468 ◽

2011 ◽

Vol 10 (4) ◽

pp. 875-880 ◽

Cited By ~ 3

Author(s):

Wei Wu ◽

Gang Du ◽

Xiaoyan Liu ◽

Lei Sun ◽

Jinfeng Kang ◽

...

Keyword(s):

Threshold Voltage ◽

Stress Effect ◽

Mobility Models ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Trench Isolation

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The Role of Shallow Trench Isolation on Channel Width Noise Scaling for Narrow Width CMOS and Flash Cells

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530810 ◽

2008 ◽

Cited By ~ 6

Author(s):

Yin-Lung Ryan Lu ◽

Yu-Ching Liao ◽

William McMahon ◽

Yung-Huei Lee ◽

Helen Kung ◽

...

Keyword(s):

Channel Width ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width

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Experimental investigation and physical explanation of shallow trench isolation stress effect in MOSFETs

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) ◽

10.1109/rsm.2017.8069169 ◽

2017 ◽

Cited By ~ 1

Author(s):

Chiew Ching Tan ◽

Philip Beow Yew Tan

Keyword(s):

Experimental Investigation ◽

Stress Effect ◽

Physical Explanation ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Trench Isolation

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Shallow Trench Isolation Stress Effect on NMOS Transistor Leakage, SRAM Standby Current and VCCMIN

ECS Transactions ◽

10.1149/1.3096438 ◽

2019 ◽

Vol 18 (1) ◽

pp. 117-122

Author(s):

Jianhua Ju ◽

Eric Liu ◽

Zhaoxu Shen ◽

Allan Zhou ◽

Jinhua Liu ◽

...

Keyword(s):

Stress Effect ◽

Nmos Transistor ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Trench Isolation

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