Two-dimensional analytical modeling of nanoscale electrically shallow junction (EJ) fully depleted SOI MESFET

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. ◽

10.1109/icm.2004.1434591 ◽

2005 ◽

Author(s):

M.J. Kumar ◽

A.A. Orouji

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Fully Depleted ◽

Shallow Junction

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Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel DG SOI MOSFET

2009 International Conference on Signal Processing Systems ◽

10.1109/icsps.2009.172 ◽

2009 ◽

Cited By ~ 2

Author(s):

Seyed Ebrahim Hosseini ◽

Mohammad Kazem Anvarifard ◽

Mahdi Gordi Armaki

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Soi Mosfet

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A Compact Two Dimensional Analytical Modeling of Nanoscale Fully Depleted Dual Material Gate Strained SOI/SON MOSFETs for Subdued SCEs

Journal of Low Power Electronics ◽

10.1166/jolpe.2014.1331 ◽

2014 ◽

Vol 10 (3) ◽

pp. 383-391 ◽

Cited By ~ 5

Author(s):

Saheli Sarkhel ◽

Bibhas Manna ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Fully Depleted ◽

Dual Material

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Two-Dimensional Analytical Modeling of Fully Depleted DMG SOI MOSFET and Evidence for Diminished SCEs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.823803 ◽

2004 ◽

Vol 51 (4) ◽

pp. 569-574 ◽

Cited By ~ 193

Author(s):

M.J. Kumar ◽

A. Chaudhry

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Fully Depleted ◽

Soi Mosfet

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A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.01.041 ◽

2016 ◽

Vol 92 ◽

pp. 316-329 ◽

Cited By ~ 10

Author(s):

Anjali Priya ◽

Ram Awadh Mishra

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Two Dimensional ◽

Metal Gate ◽

Fully Depleted ◽

Soi Mosfet

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A two dimensional analytical modeling of fully depleted dual material gate SON MOSFET and evidence for suppressed SCEs

2012 International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2012.6188768 ◽

2012 ◽

Cited By ~ 1

Author(s):

S. Naha ◽

S. Sarkhel ◽

S. K. Sarkar

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Fully Depleted ◽

Dual Material

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Two-dimensional analytical modeling and simulation of the potential and threshold voltage of a new fully depleted dual metal gate SOI MESFET

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. ◽

10.1109/icm.2004.1434590 ◽

2005 ◽

Cited By ~ 1

Author(s):

P. Hashemi ◽

A. Behnam ◽

E. Fathi ◽

A. Afzali-Kusha

Keyword(s):

Modeling And Simulation ◽

Threshold Voltage ◽

Analytical Modeling ◽

Two Dimensional ◽

Metal Gate ◽

Fully Depleted ◽

Dual Metal

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A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

2008 4th International Conference on Wireless Communications, Networking and Mobile Computing ◽

10.1109/wicom.2008.460 ◽

2008 ◽

Author(s):

Xiu-Long Wu ◽

Jun-Ning Chen ◽

Dao-Ming Ke

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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Analytical modeling of THz wave propagation inside ungated two dimensional electron gas layers

2011 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2011.5972737 ◽

2011 ◽

Author(s):

Mohammad A. Khorrami ◽

Samir El-Ghazaly ◽

Shui-Qing Yu ◽

Hameed Naseem

Keyword(s):

Wave Propagation ◽

Analytical Modeling ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Thz Wave ◽

Dimensional Electron Gas

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A new two-dimensional short channel model for the drain current-voltage characteristics of a fully depleted SOI (silicon-on-insulator) MOSFET

International Journal of Electronics ◽

10.1080/00207219508926271 ◽

1995 ◽

Vol 79 (3) ◽

pp. 293-301 ◽

Cited By ~ 3

Author(s):

VANEETA AGGARWAL ◽

R. S. GUPTA

Keyword(s):

Channel Model ◽

Drain Current ◽

Silicon On Insulator ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Current Voltage ◽

Current Voltage Characteristics

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2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

Acta Physica Sinica ◽

10.7498/aps.57.3807 ◽

2008 ◽

Vol 57 (6) ◽

pp. 3807

Author(s):

Luan Su-Zhen ◽

Liu Hong-Xia ◽

Jia Ren-Xu ◽

Cai Nai-Qiong

Keyword(s):

Analytical Modeling ◽

Fully Depleted ◽

Soi Mosfet ◽

High K ◽

High K Dielectric ◽

Dual Material

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